Inventor · disambiguated record
Takahiro Kozawa
Also filed as: KOZAWA TAKAHIRO
16 granted patents·2 pending applications·779 citations·filing 1992–2021
95Inventor score
Top patents by PatentIndex Score
18 records- 0197US5369289AGallium nitride-based compound semiconductor light-emitting device and method for making the sameTOYODA GOSEI KK·Filed 1992·Granted Nov 29, 1994·279 cites·18 claims
- 0295US6891203B2Light emitting deviceTOYODA GOSEI KK·Filed 2002·Granted May 10, 2005·108 cites·10 claims
- 0394US7646036B2Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrodeTOYOTA CHUO KENKYUSHO KK·Filed 2008·Granted Jan 12, 2010·30 cites·20 claims
- 0488US6008539AElectrodes for p-type group III nitride compound semiconductorsTOYODA GOSEI KK·Filed 1996·Granted Dec 28, 1999·76 cites·14 claims
- 0586US5272108AMethod of manufacturing gallium nitride semiconductor light-emitting deviceTOYODA CHUO KENKYUSHO KK·Filed 1992·Granted Dec 21, 1993·74 cites·16 claims
- 0683US7247884B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2002·Granted Jul 24, 2007·35 cites·33 claims
- 0781US6649943B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2002·Granted Nov 18, 2003·33 cites·20 claims
- 0880US5753939ALight-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formedTOYODA GOSEI KK·Filed 1997·Granted May 19, 1998·80 cites·32 claims
- 0976US10262863B2Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatusSHOWA DENKO KK·Filed 2015·Granted Apr 16, 2019·2 cites·9 claims
- 1076US7897987B2Light-emitting device including light-emitting diode and stacked light-emitting phosphor layersTOYODA GOSEI KK·Filed 2009·Granted Mar 1, 2011·7 cites·16 claims
- 1176US6121127AMethods and devices related to electrodes for p-type group III nitride compound semiconductorsTOYODA GOSEI KK·Filed 1999·Granted Sep 19, 2000·38 cites·16 claims
- 1269US10896831B2Film forming apparatusNUFLARE TECHNOLOGY INC·Filed 2018·Granted Jan 19, 2021·1 cites·10 claims
- 1367US8703590B2Vapor-phase growth method for semiconductor filmITO TAKAHIRO·Filed 2010·Granted Apr 22, 2014·2 cites·4 claims
- 1465US6864502B2III group nitride system compound semiconductor light emitting elementTOYODA GOSEI KK·Filed 2003·Granted Mar 8, 2005·13 cites·8 claims
- 1560US2021202947A1Methods for producing of coated positive electrode active material and lithium-ion secondary battery and lithium-ion secondary batteryKANEKA CORP·Filed 2021·Application pending·0 cites
- 1655US8956458B2Vapor deposition device and vapor deposition methodKOZAWA TAKAHIRO·Filed 2011·Granted Feb 17, 2015·1 cites·4 claims
- 1742US9184044B1Method for manufacturing semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Granted Nov 10, 2015·0 cites·4 claims
- 1837US2006273324A1Light-emitting diode and process for producing the sameASAI MAKOTO·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →