Inventor · disambiguated record
Taishi Kubota
Also filed as: KUBOTA TAISHI
8 granted patents·4 pending applications·121 citations·filing 1988–2007
86Inventor score
Top patents by PatentIndex Score
12 records- 0172US5973355ANonvolatile semiconductor memory device and manufacturing method of the sameNEC CORP·Filed 1997·Granted Oct 26, 1999·29 cites·4 claims
- 0269US5757044AElectrically erasable and programmable read only memory cell with split floating gate for preventing cell from over-eraseNEC CORP·Filed 1995·Granted May 26, 1998·35 cites·10 claims
- 0365US4868137AMethod of making insulated-gate field effect transistorNEC CORP·Filed 1988·Granted Sep 19, 1989·34 cites·7 claims
- 0461US7592234B2Method for forming a nitrogen-containing gate insulating filmELPIDA MEMORY INC·Filed 2007·Granted Sep 22, 2009·1 cites·13 claims
- 0547US7163871B2Manufacturing method of semiconductor device and oxidization method of semiconductor substrateELPIDA MEMORY INC·Filed 2004·Granted Jan 16, 2007·3 cites·4 claims
- 0646US5972750ANonvolatile semiconductor memory device and manufacturing method of the sameNEC CORP·Filed 1998·Granted Oct 26, 1999·9 cites·3 claims
- 0740US2006166459A1Semiconductor apparatus and method of producing the sameELPIDA MEMORY INC·Filed 2006·Application pending·0 cites
- 0839US5065215ASemiconductor memory cell and method of manufacturing the sameNEC CORP·Filed 1990·Granted Nov 12, 1991·10 cites·4 claims
- 0938US2005215026A1Method for producing semiconductor deviceELPIDA MEMORY INC·Filed 2005·Application pending·0 cites
- 1037US2005227452A1Method for producing semiconductor deviceELPIDA MEMORY INC·Filed 2005·Application pending·0 cites
- 1135US2007099364A1Method for manufacturing a semiconductor device having a polymetal gate electrodeOHASHI TAKUO·Filed 2006·Application pending·0 cites
- 1227US6300185B1Polyacrystalline silicon film formation methodNEC CORP·Filed 1999·Granted Oct 9, 2001·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →