Inventor · disambiguated record
Takafumi Kunihiro
Also filed as: KUNIHIRO TAKAFUMI
22 granted patents·89 citations·filing 2011–2019
94Inventor score
Files withMICRON TECHNOLOGY INC11SONY CORP7SONY SEMICONDUCTOR SOLUTIONS CORP2KANDA YASUO1KUNIHIRO TAKAFUMI1
Top patents by PatentIndex Score
22 records- 0198US9070441B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Jun 30, 2015·40 cites·20 claims
- 0289US9349450B2Memory devices and memory operational methods including single erase operation of conductive bridge memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted May 24, 2016·8 cites·20 claims
- 0385US9911489B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 6, 2018·5 cites·34 claims
- 0482US9135978B2Memory programming methods and memory systemsKUNIHIRO TAKAFUMI·Filed 2012·Granted Sep 15, 2015·7 cites·35 claims
- 0581US9691441B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 27, 2017·4 cites·35 claims
- 0680US10395731B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 27, 2019·3 cites·37 claims
- 0779US9293196B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 22, 2016·5 cites·38 claims
- 0873US9007837B2Non-volatile memory system with reset control mechanism and method of operation thereofSONY CORP·Filed 2013·Granted Apr 14, 2015·4 cites·10 claims
- 0972US10438675B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 8, 2019·2 cites·19 claims
- 1072US10438661B2Memory devices and methods of writing memory cells at different moments in timeMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 8, 2019·2 cites·14 claims
- 1169US10783961B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 22, 2020·1 cites·14 claims
- 1269US9646690B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2015·Granted May 9, 2017·2 cites·8 claims
- 1368US10622067B2Memory systems and memory writing methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·1 cites·15 claims
- 1466US9530469B2Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereofSONY CORP·Filed 2013·Granted Dec 27, 2016·3 cites·8 claims
- 1564US11295812B2Memory devices and memory operational methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 5, 2022·0 cites·26 claims
- 1655US11875866B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 16, 2024·0 cites·26 claims
- 1755US9153317B2Non-volatile memory system with power reduction mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Oct 6, 2015·1 cites·16 claims
- 1854US8953404B2Semiconductor device having an electrical fuse elementKANDA YASUO·Filed 2011·Granted Feb 10, 2015·1 cites·15 claims
- 1947US9905300B2Memory device with variable trim parametersSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Granted Feb 27, 2018·0 cites·20 claims
- 2047US9594516B2Memory device with variable trim parametersSONY CORP·Filed 2014·Granted Mar 14, 2017·0 cites·8 claims
- 2141US9093147B2Method and apparatus for common source line charge transferSONY CORP·Filed 2013·Granted Jul 28, 2015·0 cites·14 claims
- 2239US10249366B2Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereofSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Apr 2, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →