Inventor · disambiguated record
Tan-Fu Lei
Also filed as: LEI TAN · LEI TAN F · LEI TAN-FU
12 granted patents·4 pending applications·379 citations·filing 1992–2020
92Inventor score
Files withNAT SCIENCE COUNCIL8MERCK PATENT GMBH3CHUNGHWA PICTURE TUBES LTD1IND TECH RES INST1SHENZHEN CHENBEI TECH CO LTD1
Top patents by PatentIndex Score
16 records- 0188US5943560AMethod to fabricate the thin film transistorNAT SCIENCE COUNCIL·Filed 1996·Granted Aug 24, 1999·104 cites·6 claims
- 0287US5567638AMethod for suppressing boron penetration in PMOS with nitridized polysilicon gateNAT SCIENCE COUNCIL·Filed 1995·Granted Oct 22, 1996·83 cites·14 claims
- 0386US5429966AMethod of fabricating a textured tunnel oxide for EEPROM applicationsNAT SCIENCE COUNCIL·Filed 1993·Granted Jul 4, 1995·68 cites·7 claims
- 0481US5506737AHigh-density electronic headIND TECH RES INST·Filed 1994·Granted Apr 9, 1996·36 cites·19 claims
- 0563US6551972B1Solutions for cleaning silicon semiconductors or silicon oxidesMERCK PATENT GMBH·Filed 1998·Granted Apr 22, 2003·31 cites·6 claims
- 0655US6605230B1Solutions and processes for removal of sidewall residue after dry etchingMERCK PATENT GMBH·Filed 1997·Granted Aug 12, 2003·19 cites·7 claims
- 0752US11607636B2Air purifying prompting systemSHENZHEN CHENBEI TECH CO LTD·Filed 2020·Granted Mar 21, 2023·0 cites·16 claims
- 0849US5347161AStacked-layer structure polysilicon emitter contacted p-n junction diodeNAT SCIENCE COUNCIL·Filed 1992·Granted Sep 13, 1994·19 cites·4 claims
- 0942US5674777AMethod for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic deviceNAT SCIENCE COUNCIL·Filed 1995·Granted Oct 7, 1997·9 cites·17 claims
- 1041US5517054AN-InP Schottky diode structure and a method of making the sameNAT SCIENCE COUNCIL·Filed 1995·Granted May 14, 1996·6 cites·2 claims
- 1140US2009230400A1Thin film transistor and fabricating method thereofCHUNGHWA PICTURE TUBES LTD·Filed 2008·Application pending·0 cites
- 1238US2004016719A1Solutions and processes for removal of sidewall residue after dry etchingMERCK PATENT GMBH·Filed 2003·Application pending·0 cites
- 1335US2004147070A1Ultra-shallow junction formation for nano MOS devices using amorphous-si capping layerUNIV NAT CHIAO TUNG·Filed 2003·Application pending·0 cites
- 1434US2004106260A1Process of utilizing CF4 plasma pretreatment to improve high-k dielectric materialsFiled 2003·Application pending·0 cites
- 1532US5610098AN-INP Schottky diode structure and a method of making the sameNAT SCIENCE COUNCIL·Filed 1996·Granted Mar 11, 1997·2 cites·3 claims
- 1623US6180419B1Method of manufacturing magnetic field transducer with improved sensitivity by plating a magnetic film on the back of the substrateNAT SCIENCE COUNCIL·Filed 1996·Granted Jan 30, 2001·2 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →