Inventor · disambiguated record
Ta-Chun Lin
Also filed as: LIN TA-CHUN
56 granted patents·85 pending applications·64 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD136AVERMEDIA TECH INC2AVER INFORMATION INC1TAIWAN SEMICONDUTOR MFG COMPANY LTD1UNIV NAT TAIWAN1
Top patents by PatentIndex Score
141 records- 0199US11302692B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·8 cites·16 claims
- 0296US11996320B2Reducing parasitic capacitance in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0396US11923413B2Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 0496US11742349B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·2 cites·20 claims
- 0596US11245005B2Method for manufacturing semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
- 0693US11101359B2Gate-all-around (GAA) method and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·6 cites·20 claims
- 0789US11362096B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 0888US11545573B2Hybrid nanostructure and fin structure deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 3, 2023·3 cites·20 claims
- 0988US9559134B2Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·8 cites·20 claims
- 1088US2025324688A1Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1187US12389645B2Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 1287US2025323091A1Isolation with multi-step structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1387US2025359131A1Hybrid Nanostructure and Fin Structure DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1485US12412777B2Reducing parasitic capacitance in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 1583US2025316529A1Reducing parasitic capacitance in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1682US11515199B2Semiconductor structures including standard cells and tap cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 29, 2022·2 cites·20 claims
- 1782US11037831B2Gate structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·1 cites·20 claims
- 1882US7167361B2Computer interface cardAVERMEDIA TECH INC·Filed 2005·Granted Jan 23, 2007·12 cites·19 claims
- 1981US12394663B2Isolation with multi-step structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 2081US12080607B2Structure and method for FinFET device with source/drain modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2180US12051695B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 2280US11152488B2Gate-all-around structure with dummy pattern top in channel region and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·2 cites·20 claims
- 2380US2025359199A1Threshold voltage modulation by gate height variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2480US2025081602A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2580US2025351488A1Transistor structure with gate isolation structures and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2680US2025357278A1Semiconductor device with back-side via structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2779US12266653B2Semiconductor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 2879US12183735B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2979US2024355896A1Methods of forming gate-all-around (gaa) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3079US2025359149A1Transistor structure with low resistance contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3179US2024363435A1Structure and method for finfet device with source/drain modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3279US2024363397A1Isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3379US2025359314A1Semiconductor structure with high integration density and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3478US12464763B2Hybrid nanostructure and fin structure deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 3578US12300698B2Isolation structure for preventing unintentional merging of epitaxially grown source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3678US12074057B2Isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 3778US2025349598A1Semiconductor device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3878US2025324739A1Semiconductor structures with dielectric finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3978US2025338467A1Co-optimization of memory and logic devices by source/drain modulation and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4077US2025227986A1Semiconductor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4177US2025311420A1Semiconductor device having different source/drain junction depths and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4275US11728206B2Isolation with multi-step structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 4375US2025359107A1Gate-top dielectric structure for self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4475US2024334671A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4575US2025324736A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4674US11791217B2Gate structure and method with dielectric gates and gate-cut featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 4774US2025246479A1Semiconductor device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4874US2025287669A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4973US11990525B2Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 5073US2023335619A1Gate structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 141 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →