Inventor · disambiguated record
Tao-Cheng Lu
Also filed as: LU TAO · LU TAO C · LU TAO-CHENG
174 granted patents·41 pending applications·3,533 citations·filing 1997–2023
99Inventor score
Files withMACRONIX INT CO LTD138CHINA OILFIELD SERVICES LTD5WANG SHIH-YU5SHENZHEN SMOORE TECHNOLOGY LTD4YANG I-CHEN4
Top patents by PatentIndex Score
215 records- 0199US6320786B1Method of controlling multi-state NROMMACRONIX INT CO LTD·Filed 2001·Granted Nov 20, 2001·431 cites·4 claims
- 0297US7158411B2Integrated code and data flash memoryMACRONIX INT CO LTD·Filed 2004·Granted Jan 2, 2007·116 cites·61 claims
- 0397US6690601B2Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the sameMACRONIX INT CO LTD·Filed 2002·Granted Feb 10, 2004·162 cites·35 claims
- 0496US6607957B1Method for fabricating nitride read only memoryMACRONIX INT CO LTD·Filed 2002·Granted Aug 19, 2003·137 cites·18 claims
- 0596US6512696B1Method of programming and erasing a SNNNS type non-volatile memory cellMACRONIX INT CO LTD·Filed 2001·Granted Jan 28, 2003·140 cites·18 claims
- 0696US6204529B18 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gateFiled 1999·Granted Mar 20, 2001·324 cites·6 claims
- 0795US6657894B2Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cellsMACRONIX INT CO LTD·Filed 2002·Granted Dec 2, 2003·108 cites·9 claims
- 0894US7187590B2Method and system for self-convergent erase in charge trapping memory cellsMACRONIX INT CO LTD·Filed 2004·Granted Mar 6, 2007·95 cites·74 claims
- 0994US6498377B1SONOS component having high dielectric propertyMACRONIX INT CO LTD·Filed 2002·Granted Dec 24, 2002·107 cites·18 claims
- 1093USD1035121SElectronic atomizing deviceSHENZHEN SMOORE TECHNOLOGY LTD·Filed 2022·Granted Jul 9, 2024·17 cites·1 claims
- 1193US6444523B1Method for fabricating a memory device with a floating gateMACRONIX INT CO LTD·Filed 2001·Granted Sep 3, 2002·63 cites·19 claims
- 1292US6996011B2NAND-type non-volatile memory cell and method for operating sameMACRONIX INT CO LTD·Filed 2004·Granted Feb 7, 2006·62 cites·36 claims
- 1392US6721204B1Memory erase method and device with optimal data retention for nonvolatile memoryMACRONIX INT CO LTD·Filed 2003·Granted Apr 13, 2004·66 cites·40 claims
- 1492US6614694B1Erase scheme for non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Sep 2, 2003·67 cites·20 claims
- 1592US6524913B1Method of fabricating a non-volatile memory with a spacerMACRONIX INT CO LTD·Filed 2001·Granted Feb 25, 2003·74 cites·20 claims
- 1692US6215697B1Multi-level memory cell device and method for self-converged programmingMACRONIX INT CO LTD·Filed 1999·Granted Apr 10, 2001·118 cites·25 claims
- 1791US6646924B1Non-volatile memory and operating method thereofMACRONIX INT CO LTD·Filed 2002·Granted Nov 11, 2003·64 cites·23 claims
- 1891US6175519B1Virtual ground EPROM structureMACRONIX INT CO LTD·Filed 1999·Granted Jan 16, 2001·82 cites·20 claims
- 1990US6958934B2Method of programming and erasing multi-level flash memoryMACRONIX INT CO LTD·Filed 2002·Granted Oct 25, 2005·43 cites·4 claims
- 2090US6829175B2Erasing method for non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Dec 7, 2004·47 cites·11 claims
- 2188US6465849B1CMOS structure having dynamic threshold voltageMACRONIX INT CO LTD·Filed 2002·Granted Oct 15, 2002·44 cites·15 claims
- 2287USD1020075SElectronic atomizing deviceSHENZHEN SMOORE TECHNOLOGY LTD·Filed 2022·Granted Mar 26, 2024·10 cites·1 claims
- 2387US6458642B1Method of fabricating a sonos deviceMACRONIX INT CO LTD·Filed 2001·Granted Oct 1, 2002·71 cites·10 claims
- 2486US6661273B1Substrate pump circuit and method for I/O ESD protectionMACRONIX INT CO LTD·Filed 2002·Granted Dec 9, 2003·40 cites·15 claims
- 2585US11905829B2Integrated logging instrument for coring and samplingCHINA OILFIELD SERVICES LTD·Filed 2020·Granted Feb 20, 2024·3 cites·20 claims
- 2685US6724677B1ESD device used with high-voltage input padMACRONIX INT CO LTD·Filed 2002·Granted Apr 20, 2004·38 cites·13 claims
- 2784US5895241AMethod for fabricating a cell structure for mask ROMFiled 1997·Granted Apr 20, 1999·43 cites·6 claims
- 2883US6791146B2Silicon controlled rectifier structure with guard ring controlled circuitMACRONIX INT CO LTD·Filed 2002·Granted Sep 14, 2004·30 cites·10 claims
- 2982US11544560B2Prefetching and/or computing resource allocation based on predicting classification labels with temporal dataMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2020·Granted Jan 3, 2023·2 cites·20 claims
- 3082US6720614B2Operation method for programming and erasing a data in a P-channel sonos memory cellMACRONIX INT CO LTD·Filed 2001·Granted Apr 13, 2004·31 cites·12 claims
- 3182US6671209B2Erasing method for p-channel NROMMACRONIX INT CO LTD·Filed 2001·Granted Dec 30, 2003·28 cites·6 claims
- 3281US7106563B2Electrostatic discharge protection circuit coupled on I/O padMACRONIX INT CO LTD·Filed 2004·Granted Sep 12, 2006·25 cites·8 claims
- 3380US7187527B2Electrostatic discharge conduction device and mixed power integrated circuits using sameMACRONIX INT CO LTD·Filed 2004·Granted Mar 6, 2007·29 cites·26 claims
- 3479USD1092838SElectronic atomizing deviceSMOORE INTERNATIONAL HOLDINGS LTD·Filed 2023·Granted Sep 9, 2025·8 cites·1 claims
- 3579US6933540B2ESD protection apparatus and method for dual-polarity input padMACRONIX INT CO LTD·Filed 2003·Granted Aug 23, 2005·25 cites·12 claims
- 3678US6965504B2ESD protection apparatus and method for a high-voltage input padMACRONIX INT CO LTD·Filed 2002·Granted Nov 15, 2005·24 cites·17 claims
- 3778US6947267B2RC controlled ESD circuits for mixed-voltage interfaceMACRONIX INT CO LTD·Filed 2001·Granted Sep 20, 2005·24 cites·26 claims
- 3878US6140682ASelf protected stacked NMOS with non-silicided region to protect mixed-voltage I/O pad from ESD damageMACRONIX INT CO LTD·Filed 1999·Granted Oct 31, 2000·46 cites·17 claims
- 3976US6549029B1Circuit and method for measuring capacitanceMACRONIX INT CO LTD·Filed 2001·Granted Apr 15, 2003·21 cites·20 claims
- 4076US6482706B1Method to scale down device dimension using spacer to confine buried drain implantMACRONIX INT CO LTD·Filed 2001·Granted Nov 19, 2002·16 cites·20 claims
- 4175US12025159B2Hydraulic power system for downhole device and downhole deviceCHINA OILFIELD SERVICES LTD·Filed 2019·Granted Jul 2, 2024·2 cites·12 claims
- 4275US8605507B2Flash programming technology for improved margin and inhibiting disturbanceLIU CHUYUNG·Filed 2012·Granted Dec 10, 2013·10 cites·21 claims
- 4375US7348625B2Semiconductor device and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2005·Granted Mar 25, 2008·6 cites·18 claims
- 4475US7132350B2Method for manufacturing a programmable eraseless memoryMACRONIX INT CO LTD·Filed 2003·Granted Nov 7, 2006·13 cites·31 claims
- 4575US7035147B2Overerase protection of memory cells for nonvolatile memoryMACRONIX INT CO LTD·Filed 2003·Granted Apr 25, 2006·22 cites·13 claims
- 4675US6834013B2Method for programming and erasing non-volatile memory with nitride tunneling layerMACRONIX INT CO LTD·Filed 2001·Granted Dec 21, 2004·19 cites·6 claims
- 4774US8952457B2Electrostatic discharge protection circuitWANG SHIH-YU·Filed 2008·Granted Feb 10, 2015·6 cites·16 claims
- 4874US8929134B2Method of programming a flash memory by enhancing the channel voltage of a program-inhibit bit line with a boosted inhibit schemeMACRONIX INT CO LTD·Filed 2013·Granted Jan 6, 2015·5 cites·20 claims
- 4974US8345396B2Electrostatic discharge protectors having increased RC delaysMACRONIX INT CO LTD·Filed 2010·Granted Jan 1, 2013·4 cites·20 claims
- 5074US7180123B2Method for programming programmable eraseless memoryMACRONIX INT CO LTD·Filed 2003·Granted Feb 20, 2007·19 cites·56 claims
Showing the top 50 of 215 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →