Inventor · disambiguated record
Tadashi Matsuno
Also filed as: MATSUNO TADASHI
15 granted patents·4 pending applications·545 citations·filing 1989–2015
95Inventor score
Files withTOSHIBA KK18
Top patents by PatentIndex Score
19 records- 0185US6291891B1Semiconductor device manufacturing method and semiconductor deviceTOSHIBA KK·Filed 1999·Granted Sep 18, 2001·69 cites·26 claims
- 0284US6051508AManufacturing method of semiconductor deviceTOSHIBA KK·Filed 1998·Granted Apr 18, 2000·81 cites·9 claims
- 0384US5874779ASemiconductor device with improved adhesion between titanium-based metal wiring layer and insulation filmTOSHIBA KK·Filed 1997·Granted Feb 23, 1999·58 cites·1 claims
- 0482US6046502ASemiconductor device with improved adhesion between titanium-based metal layer and insulation filmTOSHIBA KK·Filed 1997·Granted Apr 4, 2000·52 cites·9 claims
- 0579US6163067ASemiconductor apparatus having wiring groove and contact hole in self-alignment mannerTOSHIBA KK·Filed 1998·Granted Dec 19, 2000·49 cites·19 claims
- 0679US5753975ASemiconductor device with improved adhesion between titanium-based metal wiring layer and insulation filmTOSHIBA KK·Filed 1995·Granted May 19, 1998·44 cites·15 claims
- 0772US6368951B2Semiconductor device manufacturing method and semiconductor deviceTOSHIBA KK·Filed 2001·Granted Apr 9, 2002·16 cites·4 claims
- 0872US5976972AMethod of making semiconductor apparatus having wiring groove and contact hole formed in a self-alignment mannerTOSHIBA KK·Filed 1996·Granted Nov 2, 1999·38 cites·33 claims
- 0970US5966634AMethod of manufacturing semiconductor device having multi-layer wiring structure with diffusion preventing filmTOSHIBA KK·Filed 1997·Granted Oct 12, 1999·41 cites·43 claims
- 1069US5850102ASemiconductor device having a second insulating layer which includes carbon or fluorine at a density lower than a first insulating layerTOSHIBA KK·Filed 1997·Granted Dec 15, 1998·32 cites·26 claims
- 1156US6127256ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Oct 3, 2000·18 cites·8 claims
- 1254US6004887ASemiconductor device with improved adhesion between titanium-based metal wiring layer and insulation filmTOSHIBA KK·Filed 1997·Granted Dec 21, 1999·18 cites·5 claims
- 1343US5759915AMethod of forming semiconductor device having an improved buried electrode formed by selective CVDTOSHIBA KK·Filed 1996·Granted Jun 2, 1998·11 cites·4 claims
- 1442US5948698AManufacturing method of semiconductor device using chemical mechanical polishingTOSHIBA KK·Filed 1997·Granted Sep 7, 1999·9 cites·22 claims
- 1539US5106782AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1989·Granted Apr 21, 1992·9 cites·10 claims
- 1635US2016079477A1Semiconductor light-emitting elementTOSHIBA KK·Filed 2015·Application pending·0 cites
- 1734US2004211958A1Semiconductor device having a conductive layer and a manufacturing method thereofTOSHIBA KK·Filed 2003·Application pending·0 cites
- 1833US2016071726A1Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 1933US2004256733A1Method for manufacturing a semiconductor device and a semiconductor deviceFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →