Inventor · disambiguated record
Takeshi Meguro
Also filed as: MEGURO TAKESHI
25 granted patents·3 pending applications·151 citations·filing 1981–2021
95Inventor score
Top patents by PatentIndex Score
28 records- 0183US7612006B2Conductive silicon nitride materials and method for producing the sameYOKOHAMA TLO COMPANY LTD·Filed 2005·Granted Nov 3, 2009·11 cites·13 claims
- 0281US11424192B2Component-embedded substrateSHINKO ELECTRIC IND CO·Filed 2021·Granted Aug 23, 2022·1 cites·16 claims
- 0381US4450421ADielectric filterFUJITSU LTD·Filed 1982·Granted May 22, 1984·26 cites·9 claims
- 0478US7550225B2BatterySONY CORP·Filed 2007·Granted Jun 23, 2009·4 cites·7 claims
- 0577US7986030B2Nitride semiconductor substrateHITACHI CABLE·Filed 2009·Granted Jul 26, 2011·2 cites·20 claims
- 0675US6487878B1Method for manufacturing a discharge tubeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 3, 2002·8 cites·21 claims
- 0773US8236438B2Nonaqueous electrolyte batteryMEGURO TAKESHI·Filed 2009·Granted Aug 7, 2012·2 cites·6 claims
- 0872US4410868ADielectric filterFUJITSU LTD·Filed 1981·Granted Oct 18, 1983·21 cites·15 claims
- 0970US7867881B2Method of manufacturing nitride semiconductor substrateHITACHI CABLE·Filed 2009·Granted Jan 11, 2011·3 cites·3 claims
- 1068US7972717B2BatterySONY CORP·Filed 2007·Granted Jul 5, 2011·2 cites·15 claims
- 1166US8206844B2Battery and center pinMEGURO TAKESHI·Filed 2005·Granted Jun 26, 2012·2 cites·22 claims
- 1264US5690890ASolderMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Nov 25, 1997·24 cites·1 claims
- 1363US8664697B2Transistor deviceMEGURO TAKESHI·Filed 2012·Granted Mar 4, 2014·2 cites·20 claims
- 1462US4425555ADielectric filter moduleFUJITSU LTD·Filed 1981·Granted Jan 10, 1984·15 cites·10 claims
- 1559US9293539B2Nitride semiconductor epitaxial wafer and nitride semiconductor deviceHITACHI METALS LTD·Filed 2014·Granted Mar 22, 2016·1 cites·5 claims
- 1659US8102026B2Group-III nitride semiconductor freestanding substrate and manufacturing method of the sameERI TAKESHI·Filed 2009·Granted Jan 24, 2012·2 cites·10 claims
- 1758US6568216B2Method for manufacturing a discharge tubeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 27, 2003·2 cites·26 claims
- 1852US8466471B2Nitride semiconductor free-standing substrate and method for making sameSUZUKI TAKAYUKI·Filed 2008·Granted Jun 18, 2013·0 cites·15 claims
- 1950US7670856B2Nitride semiconductor substrate and method of making sameHITACHI CABLE·Filed 2007·Granted Mar 2, 2010·0 cites·6 claims
- 2050US6729925B2Method for manufacturing discharge tube and discharge lampMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 4, 2004·4 cites·12 claims
- 2149US6274389B1Mounting structure and mounting process from semiconductor devicesLOCTITE R & D LTD·Filed 1998·Granted Aug 14, 2001·17 cites·19 claims
- 2245US8822070B2Battery with secure short-circuiting mechanismMEGURO TAKESHI·Filed 2008·Granted Sep 2, 2014·0 cites·16 claims
- 2345US2013241497A1Battery, center pin, battery pack, electronic apparatus, electric tool, electric vehicle, electrical storage apparatus and electricity systemSONY CORP·Filed 2013·Application pending·0 cites
- 2444US7211955B2LampMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 1, 2007·2 cites·8 claims
- 2543US2007131967A1Self-standing GaN single crystal substrate, method of making same, and method of making a nitride semiconductor deviceHITACHI CABLE·Filed 2006·Application pending·0 cites
- 2643US2021210602A1Semiconductor wafer for heterojunction bipolar transistor and heterojunction bipolar transistorSCIOCS CO LTD·Filed 2019·Application pending·0 cites
- 2737US9865715B2Epitaxial wafer for heterojunction bipolar transistor and heterojunction bipolar transistorSUMITOMO CHEMICAL CO·Filed 2015·Granted Jan 9, 2018·0 cites·14 claims
- 2836US10312324B2Epitaxial wafer for hetero-junction bipolar transistor and hetero-junction bipolar transistorSUMITOMO CHEMICAL CO·Filed 2016·Granted Jun 4, 2019·0 cites·4 claims
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