Inventor · disambiguated record
Tadaharu Minato
Also filed as: MINATO TADAHARU
45 granted patents·1 pending application·1,558 citations·filing 1988–2020
98Inventor score
Top patents by PatentIndex Score
46 records- 0197US6040600ATrenched high breakdown voltage semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 21, 2000·284 cites·20 claims
- 0295US6103578AMethod for forming high breakdown semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 15, 2000·151 cites·6 claims
- 0392US6821824B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 23, 2004·53 cites·28 claims
- 0492US6307246B1Semiconductor resurf devices formed by oblique trench implantationMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 23, 2001·194 cites·16 claims
- 0592US6225649B1Insulated-gate bipolar semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 1, 2001·108 cites·26 claims
- 0689US5783491AMethod of forming a truck MOS gate or a power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 21, 1998·85 cites·13 claims
- 0788US7253031B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Aug 7, 2007·37 cites·4 claims
- 0888US6518144B2Semiconductor device having trenches and process for sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 11, 2003·42 cites·8 claims
- 0985US11222151B2SEB resistance evaluation method and SEB resistance evaluation deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Jan 11, 2022·2 cites·12 claims
- 1085US6331466B1Insulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 18, 2001·37 cites·6 claims
- 1185US5514880AField effect thin-film transistor for an SRAM with reduced standby currentMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 7, 1996·56 cites·15 claims
- 1284US5508534ATrench gate type insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 16, 1996·78 cites·25 claims
- 1382US6323508B1Insulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 27, 2001·28 cites·15 claims
- 1482US5977570ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 2, 1999·41 cites·13 claims
- 1581US6867437B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Mar 15, 2005·21 cites·3 claims
- 1681US5736438AField effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 7, 1998·46 cites·4 claims
- 1778US5773851ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 30, 1998·43 cites·16 claims
- 1876US6445012B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 3, 2002·16 cites·1 claims
- 1974US6107650AInsulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 22, 2000·38 cites·12 claims
- 2073US10866272B2Simulation circuit and simulation methodMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Dec 15, 2020·1 cites·14 claims
- 2173US8377832B2Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Feb 19, 2013·5 cites·12 claims
- 2273US7105387B2Semiconductor device and manufacturing method for the sameMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Sep 12, 2006·13 cites·1 claims
- 2372US7955930B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2010·Granted Jun 7, 2011·3 cites·5 claims
- 2472US7067874B2Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being roundMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Jun 27, 2006·13 cites·5 claims
- 2571US8482030B2Insulated gate bipolar transistor and manufacturing method thereofAONO SHINJI·Filed 2011·Granted Jul 9, 2013·3 cites·26 claims
- 2671US8329563B2Semiconductor device including a gettering layer and manufacturing method thereforMINATO TADAHARU·Filed 2006·Granted Dec 11, 2012·5 cites·4 claims
- 2771US6265735B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 24, 2001·22 cites·3 claims
- 2870US6693310B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 17, 2004·12 cites·4 claims
- 2967US7701003B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Apr 20, 2010·3 cites·4 claims
- 3066US6710401B2Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being roundMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 23, 2004·10 cites·12 claims
- 3165US6949798B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 27, 2005·9 cites·9 claims
- 3265US6897493B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Granted May 24, 2005·9 cites·1 claims
- 3365US5578522ASemiconductor device and method of fabricating sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 26, 1996·28 cites·23 claims
- 3462US9299818B2Insulating gate-type bipolar transistorAONO SHINJI·Filed 2012·Granted Mar 29, 2016·2 cites·9 claims
- 3560US6465871B2Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 15, 2002·5 cites·2 claims
- 3660US6100575ASemiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 8, 2000·18 cites·3 claims
- 3758US7009239B2Vertical semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Mar 7, 2006·9 cites·6 claims
- 3855US7829898B2Power semiconductor device having raised channel and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Nov 9, 2010·1 cites·8 claims
- 3952US9691619B2Laser annealing device with multiple lasersKANADA KAZUNORI·Filed 2013·Granted Jun 27, 2017·1 cites·9 claims
- 4052US6252259B1Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 26, 2001·2 cites·5 claims
- 4150US5086330ABipolar semiconductor switching deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 4, 1992·12 cites·5 claims
- 4240US9673308B2Semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Jun 6, 2017·0 cites·6 claims
- 4340US5925899AVertical type insulated gate bipolar transistor having a planar gate structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 20, 1999·6 cites·9 claims
- 4433US2020105572A1Heat treatment device, heat treatment method, laser annealing device, and laser annealing methodMITSUBISHI ELECTRIC CORP·Filed 2017·Application pending·0 cites
- 4532US5144402ASemiconductor switching device and method of controlling a carrier life time in a semiconductor switching deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 1, 1992·4 cites·1 claims
- 4630US5510274AMethod of controlling a carrier lifetime in a semiconductor switching deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Apr 23, 1996·2 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →