Inventor · disambiguated record
Takaya Miyase
Also filed as: MIYASE TAKAYA
8 granted patents·5 pending applications·3 citations·filing 2018–2023
73Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES13
Top patents by PatentIndex Score
13 records- 0175US11735415B2Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Aug 22, 2023·2 cites·20 claims
- 0269US12176399B2Method of manufacturing a silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Dec 24, 2024·0 cites·5 claims
- 0369US12125881B2Silicon carbide epitaxial substrate and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Oct 22, 2024·1 cites·14 claims
- 0454US12428752B2Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Sep 30, 2025·0 cites·6 claims
- 0550US2025142914A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2023·Application pending·0 cites
- 0649US2020219981A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Application pending·0 cites
- 0748US11459670B2Silicon carbide epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Oct 4, 2022·0 cites·9 claims
- 0846US2023272550A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 0942US12020924B2Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jun 25, 2024·0 cites·6 claims
- 1042US12020927B2Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jun 25, 2024·0 cites·4 claims
- 1142US2024274434A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 1240US2024363696A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 1339US10526699B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Jan 7, 2020·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →