Inventor · disambiguated record
Takeo Muragishi
Also filed as: MURAGISHI TAKEO
9 granted patents·165 citations·filing 1991–1996
89Inventor score
Technology areasH10D
Top patents by PatentIndex Score
9 records- 0180US5172200AMOS memory device having a LDD structure and a visor-like insulating layerMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 15, 1992·48 cites·14 claims
- 0277US5286665AMethod of manufacturing MDS memory device having a LDD structure and a visor-like insulating layerMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Feb 15, 1994·40 cites·6 claims
- 0364US5548153AThin film transistor with means to prevent threshold variationsMITSUBHISI DENKI KABUSHIKI KAI·Filed 1995·Granted Aug 20, 1996·28 cites·19 claims
- 0451US5541126AMethod of making semiconductor device having thin film transistorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 30, 1996·11 cites·10 claims
- 0551US5536951ASemiconductor device having thin film transistor with diffusion preventing layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 16, 1996·14 cites·16 claims
- 0649US5281828AThin film transistor with reduced leakage currentMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 25, 1994·11 cites·16 claims
- 0746US5326989ASemiconductor device having thin film transistor and method of manufacturing the sameMISTUBISHI DENKI KABUSHIKI KAI·Filed 1992·Granted Jul 5, 1994·9 cites·9 claims
- 0834US5670390AMethod of making semiconductor device having thin film transistorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 23, 1997·3 cites·4 claims
- 0929US5436184AThin film transistor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 25, 1995·1 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →