Inventor · disambiguated record
Taehui Na
Also filed as: NA TAEHUI
21 granted patents·3 pending applications·149 citations·filing 2013–2023
94Inventor score
Files withQUALCOMM INC14SAMSUNG ELECTRONICS CO LTD6QUALCOMM TECHNOLOGIES INC2IND ACADEMIC COOP FOUND YONSEI UNIV1IND ACADEMIC COOPERATION FOUND YONSEI UNIV1
Top patents by PatentIndex Score
24 records- 0196US9852783B1Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltagesQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Dec 26, 2017·31 cites·30 claims
- 0296US9378781B1System, apparatus, and method for sense amplifiersQUALCOMM INC·Filed 2015·Granted Jun 28, 2016·25 cites·26 claims
- 0395US9728259B1Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense marginQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·21 cites·30 claims
- 0491US9800271B2Error correction and decodingQUALCOMM INC·Filed 2015·Granted Oct 24, 2017·8 cites·27 claims
- 0590US9666259B1Dual mode sensing schemeQUALCOMM INC·Filed 2016·Granted May 30, 2017·11 cites·30 claims
- 0683US9390779B2System and method of sensing a memory cellQUALCOMM INC·Filed 2013·Granted Jul 12, 2016·8 cites·38 claims
- 0782US10263645B2Error correction and decodingQUALCOMM INC·Filed 2017·Granted Apr 16, 2019·4 cites·22 claims
- 0882US9406354B1System, apparatus, and method for an offset cancelling single ended sensing circuitQUALCOMM INC·Filed 2015·Granted Aug 2, 2016·6 cites·19 claims
- 0981US11127457B2Memory device with reduced read disturbance and method of operating the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 21, 2021·2 cites·20 claims
- 1081US9281039B2System and method to provide a reference cell using magnetic tunnel junction cellsQUALCOMM INC·Filed 2013·Granted Mar 8, 2016·7 cites·31 claims
- 1179US9111623B1NMOS-offset canceling current-latched sense amplifierQUALCOMM INC·Filed 2014·Granted Aug 18, 2015·6 cites·20 claims
- 1278US9502088B2Constant sensing current for reading resistive memoryQUALCOMM INC·Filed 2014·Granted Nov 22, 2016·6 cites·18 claims
- 1375US11100959B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 24, 2021·2 cites·20 claims
- 1475US9691462B2Latch offset cancelation for magnetoresistive random access memoryQUALCOMM INC·Filed 2014·Granted Jun 27, 2017·5 cites·17 claims
- 1573US9165630B2Offset canceling dual stage sensing circuitQUALCOMM INC·Filed 2013·Granted Oct 20, 2015·4 cites·20 claims
- 1671US9502091B1Sensing circuit for resistive memory cellsQUALCOMM INC·Filed 2015·Granted Nov 22, 2016·3 cites·20 claims
- 1754US2024349618A1Spin logic device having enhanced data retentionIND ACADEMIC COOP FOUND YONSEI UNIV·Filed 2023·Application pending·0 cites
- 1851US12375084B2Spin-charge conversion based spin logic deviceIND ACADEMIC COOPERATION FOUND YONSEI UNIV·Filed 2023·Granted Jul 29, 2025·0 cites·7 claims
- 1947US11100990B2Memory device for avoiding multi-turn on of memory cell during reading, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·19 claims
- 2046US11475948B2Memory device and operating method of memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·26 claims
- 2143US11011228B2Memory device having an increased sensing marginSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 18, 2021·0 cites·17 claims
- 2239US2016093353A1Dual stage sensing current with reduced pulse width for reading resistive memoryQUALCOMM INC·Filed 2014·Application pending·0 cites
- 2339US2016093352A1Reference voltage generation for sensing resistive memoryQUALCOMM INC·Filed 2014·Application pending·0 cites
- 2438US10998038B2Memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 4, 2021·0 cites·32 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →