Inventor · disambiguated record
Tatsuro Nagahara
Also filed as: NAGAHARA TATSURO
23 granted patents·14 pending applications·90 citations·filing 1990–2022
93Inventor score
Files withMERCK PATENT GMBH9AZ ELECTRONIC MAT LUXEMBOURG SARL7NAGAHARA TATSURO5SCREEN HOLDINGS CO LTD4SHINDE NINAD2
Top patents by PatentIndex Score
37 records- 0189US10792712B2Substrate processing method and substrate processing apparatusSCREEN HOLDINGS CO LTD·Filed 2019·Granted Oct 6, 2020·6 cites·17 claims
- 0287US11211241B2Substrate processing method and substrate processing apparatusSCREEN HOLDINGS CO LTD·Filed 2019·Granted Dec 28, 2021·4 cites·14 claims
- 0381US11260431B2Substrate processing method and substrate processing apparatusSCREEN HOLDINGS CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·18 claims
- 0474US9411232B2Composition for forming fine resist pattern, and pattern formation method using sameAZ ELECTRONIC MAT (LUXEMBOURG) S A R L·Filed 2014·Granted Aug 9, 2016·3 cites·16 claims
- 0573US8969172B2Method for forming isolation structureNAKAMOTO NAOKO·Filed 2011·Granted Mar 3, 2015·7 cites·20 claims
- 0671US6902875B2Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereofCLARIANT FINANCE BVI LTD·Filed 2001·Granted Jun 7, 2005·11 cites·14 claims
- 0768US10451974B2Rinse composition, a method for forming resist patterns and a method for making semiconductor devicesAZ ELECTRONIC MAT LUXEMBOURG SARL·Filed 2017·Granted Oct 22, 2019·1 cites·11 claims
- 0867US9165818B2Method for forming insulating filmTAKANO YUSUKE·Filed 2012·Granted Oct 20, 2015·3 cites·14 claims
- 0964US11901173B2Substrate processing methodSCREEN HOLDINGS CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·15 claims
- 1064US5177578APolycrystalline silicon thin film and transistor using the sameTONEN CORP·Filed 1990·Granted Jan 5, 1993·45 cites·5 claims
- 1163US10000386B2Method for forming of siliceous film and siliceous film formed using sameAZ ELECTRONIC MAT MANUFACTURING JAPAN KK·Filed 2013·Granted Jun 19, 2018·2 cites·4 claims
- 1263US8889229B2Method for formation of siliceous film and siliceous film formed by the methodNAGAHARA TATSURO·Filed 2009·Granted Nov 18, 2014·5 cites·11 claims
- 1358US9029071B2Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed therebySHINDE NINAD·Filed 2011·Granted May 12, 2015·2 cites·7 claims
- 1454US10494261B2Inorganic polysilazane resinAZ ELECTRONIC MAT LUXEMBOURG SARL·Filed 2017·Granted Dec 3, 2019·0 cites·10 claims
- 1553US9921481B2Fine resist pattern-forming composition and pattern forming method using sameAZ ELECTRONIC MAT LUXEMBOURG SARL·Filed 2014·Granted Mar 20, 2018·0 cites·12 claims
- 1651US2024166947A1Substrate treating solution, and using the same, method for manufacturing substrate and method for manufacturing deviceMERCK PATENT GMBH·Filed 2022·Application pending·0 cites
- 1750US2024036469A1Method for manufacturing thickened resist pattern, thickening solution, and method for manufacturing processed substrateMERCK PATENT GMBH·Filed 2021·Application pending·0 cites
- 1850US2015004421A1Inorganic polysilazane resinFUJIWARA TAKASHI·Filed 2013·Application pending·0 cites
- 1950US2025014899A1Method for removing upper part of sacrificial layer, and sacrificial solution and acidic aqueous solution used thereforMERCK PATENT GMBH·Filed 2021·Application pending·0 cites
- 2049US12077727B2Semiconductor aqueous composition and use of the sameMERCK PATENT GMBH·Filed 2019·Granted Sep 3, 2024·0 cites·26 claims
- 2149US2024174951A1Substrate surface treating solution, and using the same, method for manufacturing cleaned substrate and method for manufacturing deviceMERCK PATENT GMBH·Filed 2022·Application pending·0 cites
- 2248US10670969B2Reverse pattern formation composition, reverse pattern formation method, and device formation methodMERCK PATENT GMBH·Filed 2017·Granted Jun 2, 2020·0 cites·14 claims
- 2347US11392035B2Gap filling composition and pattern forming method using composition containing polymerAZ ELECTRONIC MAT LUXEMBOURG SARL·Filed 2017·Granted Jul 19, 2022·0 cites·19 claims
- 2445US10191380B2Composition for resist patterning and method for forming pattern using sameAZ ELECTRONIC MAT LUXEMBOURG SARL·Filed 2015·Granted Jan 29, 2019·0 cites·14 claims
- 2544US2023045307A1Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the sameMERCH PATENT GMBH·Filed 2020·Application pending·0 cites
- 2641US2007148591A1Pattern and wiring pattern and processes for producing themNAGAHARA TATSURO·Filed 2006·Application pending·0 cites
- 2740US11859152B2Substrate pattern filling composition and use of the sameMERCK PATENT GMBH·Filed 2020·Granted Jan 2, 2024·0 cites·20 claims
- 2839US12068150B2Substrate cleaning solution, and using the same, method for manufacturing cleaned substrate and method for manufacturing deviceMERCK PATENT GMBH·Filed 2019·Granted Aug 20, 2024·0 cites·17 claims
- 2939US11169443B2Gap filling composition and pattern forming method using low molecular weight compoundAZ ELECTRONIC MAT LUXEMBOURG SARL·Filed 2017·Granted Nov 9, 2021·0 cites·19 claims
- 3038US2019041757A1Surface treatment composition and surface treatment method of resist pattern using the sameAZ ELECTRONIC MAT LUXEMBOURG SARL·Filed 2017·Application pending·0 cites
- 3138US2022056383A1Substrate cleaning solution and method for manufacturing deviceMERCK PATENT GMBH·Filed 2019·Application pending·0 cites
- 3238US2006160014A1Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectricNAGAHARA TATSURO·Filed 2003·Application pending·0 cites
- 3337US2004081912A1Photosensitive polysilazane composition and method of forming patterned polysilazane filmFiled 2003·Application pending·0 cites
- 3435US11156920B2Lithography composition, a method for forming resist patterns and a method for making semiconductor devicesRIDGEFIELD ACQUISITION·Filed 2017·Granted Oct 26, 2021·0 cites·11 claims
- 3535US2005287469A1Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectricNAGAHARA TATSURO·Filed 2003·Application pending·0 cites
- 3630US2013316515A1Method for producing silicon dioxide filmNAGAHARA TATSURO·Filed 2012·Application pending·0 cites
- 3726US2014127630A1Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed therebySHINDE NINAD·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →