Inventor · disambiguated record
Takuma Nanjo
Also filed as: NANJO TAKUMA
8 granted patents·4 pending applications·20 citations·filing 2008–2023
78Inventor score
Top patents by PatentIndex Score
12 records- 0188US8035130B2Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity regionMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Oct 11, 2011·16 cites·9 claims
- 0273US12142675B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Nov 12, 2024·2 cites·13 claims
- 0361US10784350B2Semiconductor device and method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Sep 22, 2020·1 cites·5 claims
- 0459US8987125B2Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Mar 24, 2015·1 cites·16 claims
- 0551US2025359126A1Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 0644US9893210B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 13, 2018·0 cites·16 claims
- 0742US11282950B2Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Mar 22, 2022·0 cites·17 claims
- 0842US2011316047A1Semiconductor device and manufacturing method of the sameNANJO TAKUMA·Filed 2011·Application pending·0 cites
- 0939US11107895B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Aug 31, 2021·0 cites·19 claims
- 1039US2015069408A1Heterojunction field effect transistor and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2014·Application pending·0 cites
- 1135US10756189B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Aug 25, 2020·0 cites·10 claims
- 1227US2015228756A1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →