Inventor · disambiguated record
Tadashi Nishigoori
Also filed as: NISHIGOORI TADASHI
4 granted patents·136 citations·filing 1991–1993
80Inventor score
Files withNEC CORP4
Top patents by PatentIndex Score
4 records- 0188US5376816ABi-cmos integrated circuit device having buried region use in common for bipolar and mos transistorsNEC CORP·Filed 1993·Granted Dec 27, 1994·82 cites·3 claims
- 0249US5245210AMOS type semiconductor deviceNEC CORP·Filed 1991·Granted Sep 14, 1993·21 cites·3 claims
- 0348US5293512ASemiconductor device having a groove type isolation regionNEC CORP·Filed 1992·Granted Mar 8, 1994·19 cites·6 claims
- 0441US5293503ASemiconductor device having multilayer metal interconnectionNEC CORP·Filed 1992·Granted Mar 8, 1994·14 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →