Inventor · disambiguated record
Takaki Niwa
Also filed as: NIWA TAKAKI
18 granted patents·2 pending applications·93 citations·filing 1997–2025
91Inventor score
Top patents by PatentIndex Score
20 records- 0191US7834461B2Semiconductor apparatusNEC ELECTRONICS CORP·Filed 2007·Granted Nov 16, 2010·32 cites·14 claims
- 0276US10636663B2Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted regionTOYODA GOSEI KK·Filed 2018·Granted Apr 28, 2020·2 cites·8 claims
- 0375US9905432B2Semiconductor device, method for manufacturing the same and power converterTOYODA GOSEI KK·Filed 2016·Granted Feb 27, 2018·2 cites·13 claims
- 0472US6881988B2Heterojunction bipolar transistor and semiconductor integrated circuit device using the sameNEC COMPOUND SEMICONDUCTOR·Filed 2002·Granted Apr 19, 2005·19 cites·12 claims
- 0568US10332966B2Semiconductor device, method of manufacturing the same and power converterTOYODA GOSEI KK·Filed 2016·Granted Jun 25, 2019·1 cites·15 claims
- 0666US10332754B2Method of manufacturing nitride semiconductor deviceTOYODA GOSEI KK·Filed 2016·Granted Jun 25, 2019·1 cites·24 claims
- 0753US6355947B1Heterojunction bipolar transistor with band gap graded emitterNEC CORP·Filed 1999·Granted Mar 12, 2002·15 cites·12 claims
- 0852US5959317AHigh frequency hetero junction type field effect transistor using multilayer electron feed layerNEC CORP·Filed 1997·Granted Sep 28, 1999·14 cites·4 claims
- 0951US7304333B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2004·Granted Dec 4, 2007·5 cites·20 claims
- 1049US9852925B2Method of manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2017·Granted Dec 26, 2017·0 cites·10 claims
- 1149US2025380470A1Semiconductor deviceTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 1248US10510833B2Method for manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2018·Granted Dec 17, 2019·0 cites·7 claims
- 1348US10083918B2Manufacturing method of semiconductor deviceTOYODA GOSEI KK·Filed 2017·Granted Sep 25, 2018·0 cites·11 claims
- 1446US10879376B2Method for manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2019·Granted Dec 29, 2020·0 cites·6 claims
- 1544US10026851B2MPS diodeTOYODA GOSEI KK·Filed 2017·Granted Jul 17, 2018·0 cites·18 claims
- 1644US7038244B2Semiconductor device and method of manufacturing the sameNEC CORP·Filed 2004·Granted May 2, 2006·2 cites·5 claims
- 1741US10777674B2Semiconductor deviceTOYODA GOSEI KK·Filed 2019·Granted Sep 15, 2020·0 cites·3 claims
- 1841US7821037B2Heterojunction bipolar transistorNEC ELECTRONICS CORP·Filed 2007·Granted Oct 26, 2010·0 cites·15 claims
- 1936US9704952B2Semiconductor device and method for manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2016·Granted Jul 11, 2017·0 cites·15 claims
- 2033US2002195620A1Compound semiconductor device having heterojunction bipolar transister and other component integrated together and process for fabrication thereofNEC COMPOUND SEMICONDUCTOR·Filed 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Takaki Niwa files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →