Inventor · disambiguated record
Takao Noda
Also filed as: NODA TAKAO
29 granted patents·7 pending applications·317 citations·filing 1990–2025
97Inventor score
Top patents by PatentIndex Score
36 records- 0192US7935983B2Nitride semiconductor deviceTOSHIBA KK·Filed 2007·Granted May 3, 2011·25 cites·15 claims
- 0289US7090822B2Cathode electroactive material, production method therefor and secondary cellSHOWA DENKO KK·Filed 2005·Granted Aug 15, 2006·9 cites·14 claims
- 0388US8390030B2Nitride semiconductor deviceSAITO WATARU·Filed 2008·Granted Mar 5, 2013·13 cites·18 claims
- 0488US7538366B2Nitride semiconductor deviceTOSHIBA KK·Filed 2007·Granted May 26, 2009·17 cites·19 claims
- 0587US6673491B2Cathode electroactive material, production method therefor, and nonaqueous secondary cell using the sameSHOWA DENKO KK·Filed 2001·Granted Jan 6, 2004·31 cites·24 claims
- 0685US7498618B2Nitride semiconductor deviceTOSHIBA KK·Filed 2006·Granted Mar 3, 2009·13 cites·19 claims
- 0784US8227834B2Semiconductor deviceSAITO YASUNOBU·Filed 2011·Granted Jul 24, 2012·7 cites·9 claims
- 0883US8866151B2Semiconductor deviceNODA TAKAO·Filed 2012·Granted Oct 21, 2014·8 cites·12 claims
- 0983US6699618B2Cathode electroactive material, production method therefor and secondary cellSHOWA DENKO KK·Filed 2001·Granted Mar 2, 2004·20 cites·8 claims
- 1079US9142687B2Semiconductor diode deviceTOSHIBA KK·Filed 2014·Granted Sep 22, 2015·4 cites·18 claims
- 1179US6890456B2Cathode electroactive material, production method therefor and secondary cellSHOWA DENKO KK·Filed 2003·Granted May 10, 2005·15 cites·10 claims
- 1278US8030660B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Oct 4, 2011·6 cites·8 claims
- 1376US5064589AMethod for producing high density hexagonal boron nitride sintered articleSHOWA DENKO KK·Filed 1991·Granted Nov 12, 1991·28 cites·12 claims
- 1474US9620600B2Semiconductor device having termination region with laterally heterogeneous insulating filmsTOSHIBA KK·Filed 2015·Granted Apr 11, 2017·2 cites·10 claims
- 1574US9608058B1Semiconductor deviceTOSHIBA KK·Filed 2016·Granted Mar 28, 2017·2 cites·20 claims
- 1670US8558244B2Semiconductor device and method for manufacturing semiconductor deviceYANASE NAOKO·Filed 2011·Granted Oct 15, 2013·3 cites·9 claims
- 1770US7728354B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jun 1, 2010·4 cites·17 claims
- 1868US9029915B2Nitride semiconductor deviceTOSHIBA KK·Filed 2013·Granted May 12, 2015·2 cites·20 claims
- 1968US5319223AHigh electron mobility transistorTOSHIBA KK·Filed 1992·Granted Jun 7, 1994·29 cites·10 claims
- 2065US8203172B2Nitride semiconductor deviceSAITO WATARU·Filed 2010·Granted Jun 19, 2012·2 cites·12 claims
- 2164US5168077AMethod of manufacturing a p-type compound semiconductor thin film containing a iii-group element and a v-group element by metal organics chemical vapor depositionTOSHIBA KK·Filed 1990·Granted Dec 1, 1992·39 cites·17 claims
- 2263US6072203ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted Jun 6, 2000·23 cites·20 claims
- 2362US9385243B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Jul 5, 2016·1 cites·20 claims
- 2462US2025351414A1Semiconductor deviceTOSHIBA KK·Filed 2025·Application pending·0 cites
- 2557US6919589B2HEMT with a graded InGaAlP layer separating ohmic and Schottky contactsTOSHIBA KK·Filed 2003·Granted Jul 19, 2005·7 cites·11 claims
- 2655US8916881B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2013·Granted Dec 23, 2014·0 cites·7 claims
- 2752US2015035111A1Semiconductor deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 2851US6857974B2Repair tool for depression in putting green on golf courseFiled 2003·Granted Feb 22, 2005·1 cites·3 claims
- 2947US6936870B2Heterojunction type compound semiconductor field effect transistor and its manufacturing methodTOSHIBA KK·Filed 2003·Granted Aug 30, 2005·5 cites·12 claims
- 3047US2015357482A1Semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 3145US2015287840A1Semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 3245US2015262889A1Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 3343US9379234B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Jun 28, 2016·0 cites·16 claims
- 3443US2014283618A1Semiconductor device and strain monitorTOSHIBA KK·Filed 2013·Application pending·0 cites
- 3537US2011204380A1Nitride-based fetTOSHIBA KK·Filed 2011·Application pending·0 cites
- 3624US6337157B1Cathode electroactive material, production method and nonaqueous secondary battery comprising the sameSHOWA DENKI KABUSHIKI KAISHA·Filed 1998·Granted Jan 8, 2002·1 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →