Inventor · disambiguated record
Takeshi Nogami
Also filed as: NOGAMI TAKESHI · NOGAMI TAKESHI T N
200 granted patents·39 pending applications·5,139 citations·filing 1991–2024
99Inventor score
Top patents by PatentIndex Score
239 records- 0199US10229851B2Self-forming barrier for use in air gap formationIBM·Filed 2016·Granted Mar 12, 2019·317 cites·14 claims
- 0299US9064874B2Interconnect with titanium—oxide diffusion barrierIBM·Filed 2014·Granted Jun 23, 2015·173 cites·5 claims
- 0399US8482132B2Pad bonding employing a self-aligned plated liner for adhesion enhancementYANG CHIH-CHAO·Filed 2009·Granted Jul 9, 2013·237 cites·6 claims
- 0498US9947579B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Apr 17, 2018·15 cites·8 claims
- 0598US9786760B1Air gap and air spacer pinch offIBM·Filed 2016·Granted Oct 10, 2017·22 cites·7 claims
- 0698US9601371B2Interconnect structure with barrier layerIBM·Filed 2015·Granted Mar 21, 2017·16 cites·15 claims
- 0798US6368954B1Method of copper interconnect formation using atomic layer copper depositionADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·312 cites·28 claims
- 0898US6242349B1Method of forming copper/copper alloy interconnection with reduced electromigrationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 5, 2001·439 cites·16 claims
- 0997US10529663B1Copper interconnect with filled voidIBM·Filed 2018·Granted Jan 7, 2020·22 cites·20 claims
- 1097US10224241B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Mar 5, 2019·9 cites·20 claims
- 1197US10204829B1Low-resistivity metallic interconnect structures with self-forming diffusion barrier layersIBM·Filed 2018·Granted Feb 12, 2019·21 cites·13 claims
- 1297US9947581B2Method of forming a copper based interconnect structureIBM·Filed 2016·Granted Apr 17, 2018·10 cites·17 claims
- 1397US9455182B2Interconnect structure with capping layer and barrier layerIBM·Filed 2014·Granted Sep 27, 2016·18 cites·20 claims
- 1497US9190321B2Self-forming embedded diffusion barriersIBM·Filed 2013·Granted Nov 17, 2015·28 cites·7 claims
- 1597US6846227B2Electro-chemical machining appartusSONY CORP·Filed 2002·Granted Jan 25, 2005·81 cites·20 claims
- 1697US6693036B1Method for producing semiconductor device polishing apparatus, and polishing methodSONY CORP·Filed 2000·Granted Feb 17, 2004·121 cites·18 claims
- 1796US10325806B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Jun 18, 2019·9 cites·11 claims
- 1896US8288268B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2010·Granted Oct 16, 2012·24 cites·20 claims
- 1996US5882498AMethod for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrateADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 16, 1999·162 cites·21 claims
- 2095US8435887B2Copper interconnect formationKELLY JAMES J·Filed 2011·Granted May 7, 2013·33 cites·14 claims
- 2194US9793193B1Air gap and air spacer pinch offIBM·Filed 2016·Granted Oct 17, 2017·7 cites·7 claims
- 2294US8497202B1Interconnect structures and methods of manufacturing of interconnect structuresEDELSTEIN DANIEL C·Filed 2012·Granted Jul 30, 2013·14 cites·16 claims
- 2394US8492897B2Microstructure modification in copper interconnect structuresCABRAL JR CYRIL·Filed 2011·Granted Jul 23, 2013·15 cites·10 claims
- 2494US7317253B2Cobalt tungsten phosphate used to fill voids arising in a copper metallization processSONY CORP·Filed 2005·Granted Jan 8, 2008·30 cites·22 claims
- 2594US5968333AMethod of electroplating a copper or copper alloy interconnectADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 19, 1999·153 cites·14 claims
- 2693US10593591B2Interconnect structureTESSERA INC·Filed 2018·Granted Mar 17, 2020·4 cites·16 claims
- 2793US9105693B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2012·Granted Aug 11, 2015·11 cites·8 claims
- 2893US8227339B2Creation of vias and trenches with different depthsPONOTH SHOM·Filed 2009·Granted Jul 24, 2012·17 cites·15 claims
- 2993US7956463B2Large grain size conductive structure for narrow interconnect openingsIBM·Filed 2009·Granted Jun 7, 2011·24 cites·21 claims
- 3093US6660634B1Method of forming reliable capped copper interconnectsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 9, 2003·67 cites·15 claims
- 3193US6015747AMethod of metal/polysilicon gate formation in a field effect transistorADVANCED MICRO DEVICE·Filed 1998·Granted Jan 18, 2000·297 cites·13 claims
- 3292US11942426B2Semiconductor structure having alternating selective metal and dielectric layersIBM·Filed 2021·Granted Mar 26, 2024·2 cites·19 claims
- 3392US10685879B1Lithographic alignment of a conductive line to a viaIBM·Filed 2019·Granted Jun 16, 2020·8 cites·19 claims
- 3492US9224686B1Single damascene interconnect structureIBM·Filed 2014·Granted Dec 29, 2015·11 cites·15 claims
- 3592US8716134B2Interconnect structure employing a Mn-group VIIIB alloy linerIBM·Filed 2013·Granted May 6, 2014·12 cites·19 claims
- 3692US8703604B2Creation of vias and trenches with different depthsPONOTH SHOM·Filed 2012·Granted Apr 22, 2014·10 cites·13 claims
- 3792US6147000AMethod for forming low dielectric passivation of copper interconnectsADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 14, 2000·138 cites·21 claims
- 3891US9881833B1Barrier planarization for interconnect metallizationIBM·Filed 2016·Granted Jan 30, 2018·6 cites·16 claims
- 3991US8828870B2Microstructure modification in copper interconnect structuresIBM·Filed 2014·Granted Sep 9, 2014·8 cites·20 claims
- 4091US8525232B2Semiconductor structure having a wetting layerNOGAMI TAKESHI·Filed 2011·Granted Sep 3, 2013·13 cites·20 claims
- 4191US8492265B2Pad bonding employing a self-aligned plated liner for adhesion enhancementYANG CHIH-CHAO·Filed 2012·Granted Jul 23, 2013·11 cites·20 claims
- 4291US8211776B2Integrated circuit line with electromigration barriersHORAK DAVID V·Filed 2010·Granted Jul 3, 2012·11 cites·12 claims
- 4391US6033584AProcess for reducing copper oxide during integrated circuit fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 7, 2000·118 cites·18 claims
- 4490US10242933B2Air gap and air spacer pinch offIBM·Filed 2017·Granted Mar 26, 2019·4 cites·20 claims
- 4590US8404582B2Structure and method for manufacturing interconnect structures having self-aligned dielectric capsHORAK DAVID V·Filed 2010·Granted Mar 26, 2013·12 cites·13 claims
- 4690US6734559B1Self-aligned semiconductor interconnect barrier and manufacturing method thereforADVANCED MICRO DEVICES INC·Filed 2000·Granted May 11, 2004·59 cites·20 claims
- 4790US6368961B1Graded compound seed layers for semiconductorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·50 cites·14 claims
- 4890US6022808ACopper interconnect methodology for enhanced electromigration resistanceADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 8, 2000·105 cites·20 claims
- 4989US6479384B2Process for fabricating a semiconductor deviceSONY CORP·Filed 2001·Granted Nov 12, 2002·47 cites·18 claims
- 5088US10256191B2Hybrid dielectric scheme for varying liner thickness and manganese concentrationIBM·Filed 2017·Granted Apr 9, 2019·4 cites·5 claims
Showing the top 50 of 239 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →