Inventor · disambiguated record
Takuzo Ogawa
Also filed as: OGAWA TAKUZO · TANAKA TOMOYUKI · URA MITSURU · YASUDA YASUMICHI
20 granted patents·418 citations·filing 1973–1981
96Inventor score
Files withHITACHI LTD20
Top patents by PatentIndex Score
20 records- 0190US4223328AField controlled thyristor with dual resistivity field layerHITACHI LTD·Filed 1978·Granted Sep 16, 1980·42 cites·11 claims
- 0288US4100310AMethod of doping inpuritiesHITACHI LTD·Filed 1976·Granted Jul 11, 1978·53 cites·14 claims
- 0384US4290830AMethod of selectively diffusing aluminium into a silicon semiconductor substrateHITACHI LTD·Filed 1979·Granted Sep 22, 1981·42 cites·8 claims
- 0481US4193826AVapor phase diffusion of aluminum with or without boronHITACHI LTD·Filed 1978·Granted Mar 18, 1980·35 cites·12 claims
- 0575US4058821APhoto-coupler semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 1976·Granted Nov 15, 1977·36 cites·17 claims
- 0674US3943547ASemiconductor deviceHITACHI LTD·Filed 1973·Granted Mar 9, 1976·19 cites·12 claims
- 0772US4200877ATemperature-compensated voltage reference diode with intermediate polycrystalline layerHITACHI LTD·Filed 1977·Granted Apr 29, 1980·17 cites·11 claims
- 0869US3978514ADiode-integrated high speed thyristorHITACHI LTD·Filed 1974·Granted Aug 31, 1976·16 cites·8 claims
- 0966US4016593ABidirectional photothyristor deviceHITACHI LTD·Filed 1975·Granted Apr 5, 1977·28 cites·15 claims
- 1062US4079405ASemiconductor photodetectorHITACHI LTD·Filed 1975·Granted Mar 14, 1978·26 cites·10 claims
- 1157US4040084ASemiconductor device having high blocking voltage with peripheral circular grooveHITACHI LTD·Filed 1975·Granted Aug 2, 1977·16 cites·15 claims
- 1255US3967308ASemiconductor controlled rectifierHITACHI LTD·Filed 1974·Granted Jun 29, 1976·9 cites·8 claims
- 1354US4210464AMethod of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layersHITACHI LTD·Filed 1978·Granted Jul 1, 1980·14 cites·7 claims
- 1454US4146906ALow forward voltage drop semiconductor device having polycrystalline layers of different resistivityHITACHI LTD·Filed 1977·Granted Mar 27, 1979·14 cites·21 claims
- 1553US4136351APhoto-coupled semiconductor deviceHITACHI LTD·Filed 1977·Granted Jan 23, 1979·14 cites·9 claims
- 1652US4262295ASemiconductor deviceHITACHI LTD·Filed 1979·Granted Apr 14, 1981·14 cites·8 claims
- 1748US4354121AField controlled thyristor control circuit with additional FCT in reverse bias circuitHITACHI LTD·Filed 1981·Granted Oct 12, 1982·10 cites·15 claims
- 1838US4164436AProcess for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion sourceHITACHI LTD·Filed 1978·Granted Aug 14, 1979·6 cites·8 claims
- 1935US4219832AThyristor having low on-state voltage with low areal doping emitter regionHITACHI LTD·Filed 1976·Granted Aug 26, 1980·5 cites·11 claims
- 2034US3943550ALight-activated semiconductor-controlled rectifierHITACHI LTD·Filed 1974·Granted Mar 9, 1976·2 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →