Inventor · disambiguated record
Takasumi Ohyanagi
Also filed as: OHYANAGI TAKASUMI
13 granted patents·461 citations·filing 2000–2008
92Inventor score
Top patents by PatentIndex Score
13 records- 0198US7307313B2Semiconductor device including a vertical field effect transistor, having trenches, and a diodeHITACHI LTD·Filed 2005·Granted Dec 11, 2007·334 cites·7 claims
- 0290US6498368B2Power semiconductor deviceHITACHI LTD·Filed 2000·Granted Dec 24, 2002·56 cites·9 claims
- 0381US7763504B2Method for manufacturing silicon carbide semiconductor deviceDENSO CORP·Filed 2008·Granted Jul 27, 2010·8 cites·21 claims
- 0475US7230283B2Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each grooveDENSO CORP·Filed 2005·Granted Jun 12, 2007·5 cites·11 claims
- 0574US7355207B2Silicon carbide semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2005·Granted Apr 8, 2008·5 cites·8 claims
- 0669US7067878B2Field effect transistorHITACHI LTD·Filed 2001·Granted Jun 27, 2006·13 cites·5 claims
- 0769US6570240B1Semiconductor device having a lateral bipolar transistor and method of manufacturing sameHITACHI LTD·Filed 2000·Granted May 27, 2003·13 cites·15 claims
- 0868US7663181B2Semiconductor deviceHITACHI LTD·Filed 2005·Granted Feb 16, 2010·4 cites·26 claims
- 0968US7335928B2Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first grooveHITACHI LTD·Filed 2007·Granted Feb 26, 2008·3 cites·4 claims
- 1068US6657257B2Insulated gate field effect transistor and semiconductor integrated circuitHITACHI LTD·Filed 2001·Granted Dec 2, 2003·15 cites·25 claims
- 1150US6750513B2Semiconductor device for driving plasma display panelHITACHI LTD·Filed 2003·Granted Jun 15, 2004·3 cites·5 claims
- 1248US6885067B2SOI semiconductor deviceHITACHI LTD·Filed 2004·Granted Apr 26, 2005·2 cites·5 claims
- 1340US6909155B2Semiconductor on insulator deviceHITACHI LTD·Filed 2002·Granted Jun 21, 2005·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →