Inventor · disambiguated record
Takeaki Okabe
Also filed as: FURUMI MASATOMO · OKABE TAKEAKI
12 granted patents·419 citations·filing 1977–1996
93Inventor score
Files withHITACHI LTD12
Top patents by PatentIndex Score
12 records- 0194US4172260AInsulated gate field effect transistor with source field shield extending over multiple region channelHITACHI LTD·Filed 1977·Granted Oct 23, 1979·79 cites·11 claims
- 0284US5379230ASemiconductor integrated circuit having semiconductor output device driving external load and microprocessor unitHITACHI LTD·Filed 1994·Granted Jan 3, 1995·41 cites·4 claims
- 0382US4492974ADMOS With gate protection diode formed over base regionHITACHI LTD·Filed 1982·Granted Jan 8, 1985·36 cites·15 claims
- 0480US6028573ADriving method and apparatus for display deviceHITACHI LTD·Filed 1996·Granted Feb 22, 2000·61 cites·25 claims
- 0580US4831424AInsulated gate semiconductor device with back-to-back diodesHITACHI LTD·Filed 1987·Granted May 16, 1989·36 cites·14 claims
- 0680US4599576AInsulated gate type field effect semiconductor device and a circuit employing the deviceHITACHI LTD·Filed 1978·Granted Jul 8, 1986·42 cites·8 claims
- 0775US4213140AInsulated-gate semiconductor deviceHITACHI LTD·Filed 1978·Granted Jul 15, 1980·20 cites·16 claims
- 0868US4814288AMethod of fabricating semiconductor devices which include vertical elements and control elementsHITACHI LTD·Filed 1987·Granted Mar 21, 1989·27 cites·26 claims
- 0961US6008687ASwitching circuit and display device using the sameHITACHI LTD·Filed 1996·Granted Dec 28, 1999·28 cites·9 claims
- 1061US4817066ATransmitter/receiver for ultrasonic diagnostic systemHITACHI LTD·Filed 1986·Granted Mar 28, 1989·22 cites·5 claims
- 1149US4885628ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1989·Granted Dec 5, 1989·18 cites·8 claims
- 1245US4688323AMethod for fabricating vertical MOSFETsHITACHI LTD·Filed 1985·Granted Aug 25, 1987·9 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →