Inventor · disambiguated record
Takeo Okabe
Also filed as: OKABE TAKEO
31 granted patents·6 pending applications·248 citations·filing 1993–2025
96Inventor score
Files withJX NIPPON MINING & METALS CORP11NIPPON MINING CO9OKABE TAKEO7NAGATA KENICHI3NIKKO MATERIALS CO LTD3
Top patents by PatentIndex Score
37 records- 0192US8246764B2Copper alloy sputtering target and semiconductor element wiringOKABE TAKEO·Filed 2009·Granted Aug 21, 2012·10 cites·14 claims
- 0291US7799188B2Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anodeNIPPON MINING CO·Filed 2009·Granted Sep 21, 2010·6 cites·6 claims
- 0390US6858116B2Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particlesNIKKO MATERIALS CO LTD·Filed 2001·Granted Feb 22, 2005·41 cites·19 claims
- 0489US9090970B2High-purity copper-manganese-alloy sputtering targetNAGATA KENICHI·Filed 2012·Granted Jul 28, 2015·5 cites·7 claims
- 0589US6759143B2Tantalum or tungsten target-copper alloy backing plate assembly and production method thereforNIKKO MATERIALS CO LTD·Filed 2001·Granted Jul 6, 2004·39 cites·2 claims
- 0687US7507304B2Copper alloy sputtering target and semiconductor element wiringNIPPON MINING CO·Filed 2003·Granted Mar 24, 2009·23 cites·10 claims
- 0787US5415829ASputtering targetNIPPON MINING CO·Filed 1993·Granted May 16, 1995·41 cites·19 claims
- 0885US7943033B2Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anodeJX NIPPON MINING & METALS CORP·Filed 2010·Granted May 17, 2011·2 cites·17 claims
- 0980US9165750B2High purity copper—manganese alloy sputtering targetJX NIPPON MINING & METALS CORP·Filed 2013·Granted Oct 20, 2015·5 cites·11 claims
- 1079US7138040B2Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anodeNIPPON MINING CO·Filed 2002·Granted Nov 21, 2006·12 cites·14 claims
- 1178US7374651B2Electrolytic copper plating method, phosphorus-containing anode for electrolytic copper plating, and semiconductor wafer plated using them and having few particles adhering to itNIPPON MINING CO·Filed 2002·Granted May 20, 2008·9 cites·8 claims
- 1276US10665462B2Copper alloy sputtering target and semiconductor element wiringJX NIPPON MINING & METALS CORP·Filed 2018·Granted May 26, 2020·0 cites·7 claims
- 1375US9704695B2Sputtering target and manufacturing method thereforNAGATA KENICHI·Filed 2012·Granted Jul 11, 2017·3 cites·4 claims
- 1475US8262816B2Hafnium alloy targetOKABE TAKEO·Filed 2008·Granted Sep 11, 2012·3 cites·2 claims
- 1575US8241438B2Hafnium alloy targetOKABE TAKEO·Filed 2008·Granted Aug 14, 2012·3 cites·2 claims
- 1675US8062440B2Hafnium alloy target and process for producing the sameOKABE TAKEO·Filed 2008·Granted Nov 22, 2011·3 cites·5 claims
- 1775US7740721B2Copper alloy sputtering target process for producing the same and semiconductor element wiringNIPPON MINING CO·Filed 2004·Granted Jun 22, 2010·14 cites·4 claims
- 1875US2025361599A1Tungsten silicide target and method for manufacturing same, and method for manufacturing tungsten silicide filmJX ADVANCED METALS CORP·Filed 2025·Application pending·0 cites
- 1972US6875325B2Sputtering target producing few particlesNIKKO MATERIALS CO LTD·Filed 2001·Granted Apr 5, 2005·11 cites·11 claims
- 2069US7648621B2Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesionNIPPON MINING CO·Filed 2002·Granted Jan 19, 2010·4 cites·9 claims
- 2165US9773651B2High-purity copper sputtering targetJX NIPPON MINING & METALS CORP·Filed 2012·Granted Sep 26, 2017·1 cites·9 claims
- 2264US8252157B2Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anodeAIBA AKIHIRO·Filed 2008·Granted Aug 28, 2012·0 cites·17 claims
- 2364US2018347031A1Tungsten Sintered Compact Sputtering Target and Tungsten Film Formed Using Same TargetJX NIPPON MINING & METALS CORP·Filed 2018·Application pending·0 cites
- 2463US9812301B2Tungsten sintered compact sputtering target and method for producing sameJX NIPPON MINING & METALS CORP·Filed 2014·Granted Nov 7, 2017·1 cites·1 claims
- 2562US7459036B2Hafnium alloy target and process for producing the sameNIPPON MINING CO·Filed 2004·Granted Dec 2, 2008·5 cites·2 claims
- 2661US10047433B2Tungsten sintered compact sputtering target and tungsten film formed using same targetJX NIPPON MINING & METALS CORP·Filed 2013·Granted Aug 14, 2018·0 cites·7 claims
- 2761US9530628B2Titanium target for sputteringMAKINO NOBUHITO·Filed 2012·Granted Dec 27, 2016·1 cites·16 claims
- 2858US9472383B2Copper or copper alloy target/copper alloy backing plate assemblyOKABE TAKEO·Filed 2004·Granted Oct 18, 2016·3 cites·10 claims
- 2955US7788882B2Packaging device and packaging method for hollow cathode type sputtering targetNIPPON MINING CO·Filed 2004·Granted Sep 7, 2010·2 cites·7 claims
- 3054US12404580B2Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide filmJX NIPPON MINING & METALS CORP·Filed 2018·Granted Sep 2, 2025·0 cites·15 claims
- 3150US2022033960A1Sputtering Target and Method for Producing SameJX NIPPON MINING & METALS CORP·Filed 2019·Application pending·0 cites
- 3250US2014158532A1High-purity copper-manganese-alloy sputtering targetNAGATA KENICHI·Filed 2012·Application pending·0 cites
- 3349US2022049346A1Sputtering Target and Method for Producing SameJX NIPPON MINING & METALS CORP·Filed 2019·Application pending·0 cites
- 3448US9765425B2Copper alloy sputtering target, process for producing the same and semiconductor element wiringOKABE TAKEO·Filed 2010·Granted Sep 19, 2017·0 cites·20 claims
- 3547US2015197848A1Sputtering TargetJX NIPPON MINING & METALS CORP·Filed 2013·Application pending·0 cites
- 3644US9896745B2Copper alloy sputtering target and method for manufacturing the targetOKABE TAKEO·Filed 2002·Granted Feb 20, 2018·1 cites·14 claims
- 3742US12109608B2Method of manufacturing steering shaftHITACHI ASTEMO LTD·Filed 2020·Granted Oct 8, 2024·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →