Inventor · disambiguated record
Takeshi Okazawa
Also filed as: OKAZAWA TAKESHI
27 granted patents·2 pending applications·951 citations·filing 1984–2004
97Inventor score
Top patents by PatentIndex Score
29 records- 0197US4716131AMethod of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide filmNEC CORP·Filed 1984·Granted Dec 29, 1987·238 cites·2 claims
- 0290US6703249B2Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effectNEC ELECTRONICS CORP·Filed 2002·Granted Mar 9, 2004·57 cites·15 claims
- 0390US6643168B2Nonvolatile magnetic storage deviceNEC CORP·Filed 2002·Granted Nov 4, 2003·55 cites·19 claims
- 0489US6532163B2Non-volatile semiconductor memory device with magnetic memory cell arrayNEC CORP·Filed 2001·Granted Mar 11, 2003·55 cites·24 claims
- 0589US6477077B2Non-volatile memory deviceNEC CORP·Filed 2001·Granted Nov 5, 2002·55 cites·4 claims
- 0689US5787036AFlash memory including improved transistor cells and a method of programming the memoryNEC CORP·Filed 1996·Granted Jul 28, 1998·82 cites·11 claims
- 0785US5295107AMethod of erasing data stored in flash type nonvolatile memory cellNEC CORP·Filed 1993·Granted Mar 15, 1994·64 cites·15 claims
- 0884US6812537B2Magnetic memory and method of operation thereofNEC ELECTRONICS CORP·Filed 2002·Granted Nov 2, 2004·32 cites·28 claims
- 0984US4980732ASemiconductor device having an improved thin film transistorNEC CORP·Filed 1988·Granted Dec 25, 1990·44 cites·15 claims
- 1076US4700212ASemiconductor integrated circuit device of high degree of integrationNEC CORP·Filed 1986·Granted Oct 13, 1987·35 cites·3 claims
- 1175US7405958B2Magnetic memory device having XP cell and Str cell in one chipNEC ELECTRONICS CORP·Filed 2003·Granted Jul 29, 2008·22 cites·18 claims
- 1272US5973355ANonvolatile semiconductor memory device and manufacturing method of the sameNEC CORP·Filed 1997·Granted Oct 26, 1999·29 cites·4 claims
- 1370US6939722B2Method of forming magnetic memoryNEC ELECTRONICS CORP·Filed 2002·Granted Sep 6, 2005·16 cites·6 claims
- 1465US4584760AMethod of manufacturing a semiconductor device having a polycrystalline silicon layerNEC CORP·Filed 1984·Granted Apr 29, 1986·25 cites·3 claims
- 1562US6746875B2Magnetic memory and method of its manufactureNEC ELECTRONICS CORP·Filed 2002·Granted Jun 8, 2004·8 cites·21 claims
- 1662US5208179AMethod of fabricating programmable read only memory device having trench isolation structureNEC CORP·Filed 1990·Granted May 4, 1993·30 cites·13 claims
- 1761US5309402AFlash electrically erasable and programmable ROMNEC CORP·Filed 1992·Granted May 3, 1994·21 cites·9 claims
- 1857US5316961AFloating gate type erasable and programmable read only memory cell, method of making the same, and electrically erasing and writing methodNEC CORP·Filed 1991·Granted May 31, 1994·28 cites·4 claims
- 1954US5371704ANonvolatile memory device with compensation for over-erasing operationNEC CORP·Filed 1993·Granted Dec 6, 1994·15 cites·9 claims
- 2047US6674663B2Nonvolatile storage device and operating method thereofNEC ELECTRONICS CORP·Filed 2002·Granted Jan 6, 2004·5 cites·23 claims
- 2146US7009876B2MRAM and data writing method thereforNEC ELECTRONICS CORP·Filed 2003·Granted Mar 7, 2006·4 cites·10 claims
- 2246US5972750ANonvolatile semiconductor memory device and manufacturing method of the sameNEC CORP·Filed 1998·Granted Oct 26, 1999·9 cites·3 claims
- 2340US5675163ANon-volatile semiconductor memory device with thin insulation layer below erase gateNEC CORP·Filed 1995·Granted Oct 7, 1997·6 cites·20 claims
- 2440US5523976ANon-volatile semiconductor memory device having a memory cell group operative as a redundant memory cell group for replacement of another groupNEC CORP·Filed 1995·Granted Jun 4, 1996·7 cites·16 claims
- 2535US5523969AElectrically erasable programmable non-volatile semiconductor memory device and method for manufacturing the sameNEC CORP·Filed 1994·Granted Jun 4, 1996·7 cites·3 claims
- 2634US2005064157A1Magnetic memory and method of operation thereofFiled 2004·Application pending·0 cites
- 2733US2002000597A1Nonvolatile semiconductor memory device and method for recording informationFiled 2001·Application pending·0 cites
- 2832US6834018B2Nonvolatile memory device having data read operation with using reference cell and method thereofNEC ELECTRONICS CORP·Filed 2002·Granted Dec 21, 2004·2 cites·20 claims
- 2930US4885624AStacked metal-insulator semiconductor deviceNEC CORP·Filed 1988·Granted Dec 5, 1989·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →