Inventor · disambiguated record
Takahiro Onai
Also filed as: ONAI TAKAHIRO
21 granted patents·2 pending applications·646 citations·filing 1987–2007
96Inventor score
Top patents by PatentIndex Score
23 records- 0195US6982465B2Semiconductor device with CMOS-field-effect transistors having improved drain current characteristicsRENESAS TECH CORP·Filed 2001·Granted Jan 3, 2006·121 cites·16 claims
- 0294US5962880AHeterojunction bipolar transistorHITACHI LTD·Filed 1997·Granted Oct 5, 1999·154 cites·18 claims
- 0382US6667199B2Semiconductor device having a replacement gate type field effect transistor and its manufacturing methodHITACHI LTD·Filed 2002·Granted Dec 23, 2003·31 cites·3 claims
- 0482US6524903B2Method of manufacturing a semiconductor device having two peaks in an impurity concentration distributionHITACHI LTD·Filed 2001·Granted Feb 25, 2003·33 cites·20 claims
- 0582US6004865AMethod of fabricating multi-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1996·Granted Dec 21, 1999·45 cites·5 claims
- 0680US8436333B2Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing methodSAITO SHINICHI·Filed 2007·Granted May 7, 2013·8 cites·7 claims
- 0780US7042051B2Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel regionRENESAS TECH CORP·Filed 2002·Granted May 9, 2006·29 cites·28 claims
- 0877US5523602AMulti-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1994·Granted Jun 4, 1996·61 cites·18 claims
- 0976US6878606B2Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germaniumRENESAS TECH CORP·Filed 2003·Granted Apr 12, 2005·20 cites·8 claims
- 1074US6313012B1Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1999·Granted Nov 6, 2001·30 cites·6 claims
- 1164US7029988B2Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germaniumRENESAS TECH CORP·Filed 2004·Granted Apr 18, 2006·10 cites·19 claims
- 1261US5598015AHetero-junction bipolar transistor and semiconductor devices using the sameHITACHI LTD·Filed 1994·Granted Jan 28, 1997·20 cites·5 claims
- 1357US7042055B2Semiconductor device and manufacturing thereofRENESAS TECH CORP·Filed 2002·Granted May 9, 2006·7 cites·30 claims
- 1447US5387545AImpurity diffusion methodHITACHI LTD·Filed 1991·Granted Feb 7, 1995·21 cites·16 claims
- 1545US5430317ASemiconductor deviceHITACHI LTD·Filed 1993·Granted Jul 4, 1995·10 cites·24 claims
- 1644US5324983ASemiconductor deviceHITACHI LTD·Filed 1992·Granted Jun 28, 1994·10 cites·31 claims
- 1741US7405588B2Device and data processing method employing the deviceHITACHI LTD·Filed 2004·Granted Jul 29, 2008·2 cites·17 claims
- 1841US5177584ASemiconductor integrated circuit device having bipolar memory, and method of manufacturing the sameHITACHI LTD·Filed 1991·Granted Jan 5, 1993·8 cites·7 claims
- 1940US5109263ASemiconductor device with optimal distance between emitter and trench isolationHITACHI LTD·Filed 1990·Granted Apr 28, 1992·11 cites·9 claims
- 2039US5424575ASemiconductor device for SOI structure having lead conductor suitable for fine patterningHITACHI LTD·Filed 1992·Granted Jun 13, 1995·7 cites·22 claims
- 2139US2005139867A1Field effect transistor and manufacturing method thereofFiled 2004·Application pending·0 cites
- 2236US4926235ASemiconductor deviceTAMAKI YOICHI·Filed 1987·Granted May 15, 1990·8 cites·30 claims
- 2334US2003025551A1Reference voltage generatorHITACHI LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →