Inventor · disambiguated record

Tae-Myoung Park

Also filed as: PARK TAE-MYOUNG

1 granted patent·3 citations·filing 1998–1998

21Inventor score

Technology areasH10P

Files withSAMSUNG ELECTRONICS CO LTD1

Top patents by PatentIndex Score

1 record

0119US6066538AMethods and apparatus for forming integrated circuit capacitors having composite oxide-nitride-oxide dielectric layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 23, 2000·3 cites·15 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →