Inventor · disambiguated record
Tai-Su Park
Also filed as: PARK TAI-SU
37 granted patents·10 pending applications·1,114 citations·filing 1994–2013
98Inventor score
Top patents by PatentIndex Score
47 records- 0197US6107143AMethod for forming a trench isolation structure in an integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 22, 2000·287 cites·14 claims
- 0295US7351622B2Methods of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 1, 2008·54 cites·17 claims
- 0392US6461937B1Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetchingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 8, 2002·78 cites·7 claims
- 0491US7148541B2Vertical channel field effect transistors having insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 12, 2006·53 cites·34 claims
- 0591US5902127AMethods for forming isolation trenches including doped silicon oxideSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 11, 1999·126 cites·22 claims
- 0689US6717231B2Trench isolation regions having recess-inhibiting layers therein that protect against overetchingSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·52 cites·6 claims
- 0788US9184086B2Methods of fabricating semiconductor device having shallow trench isolation (STI)SAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 10, 2015·10 cites·20 claims
- 0888US6331469B1Trench isolation structure, semiconductor device having the same, and trench isolation methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 18, 2001·43 cites·20 claims
- 0987US6482715B2Method of forming shallow trench isolation layer in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 19, 2002·48 cites·24 claims
- 1085US7015106B2Double gate field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·35 cites·13 claims
- 1185US6465866B2Trench isolation regions having trench liners with recessed endsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 15, 2002·34 cites·10 claims
- 1284US7968442B2Fin field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 28, 2011·11 cites·7 claims
- 1380US8835275B2Semiconductor devices having nitrided gate insulating layer and methods of fabricating the samePARK TAI-SU·Filed 2012·Granted Sep 16, 2014·6 cites·17 claims
- 1478US7807543B2Methods of manufacturing trench isolation structures using selective plasma ion immersion implantation and deposition (PIIID)SAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·8 cites·16 claims
- 1578US7288823B2Double gate field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 30, 2007·7 cites·7 claims
- 1677US6627514B1Semiconductor device having a Y-shaped isolation layer and simplified method for manufacturing the Y-shaped isolation layer to prevent divot formationSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 30, 2003·25 cites·17 claims
- 1777US6511888B1Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing stepSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 28, 2003·21 cites·6 claims
- 1874US6617662B2Semiconductor device having a trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 9, 2003·18 cites·4 claims
- 1972US8691649B2Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devicesPARK TAI-SU·Filed 2011·Granted Apr 8, 2014·4 cites·20 claims
- 2072US7459359B2Methods of fabricating vertical channel field effect transistors having insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·4 cites·12 claims
- 2171US5966614ASilicon nitride-free isolation methods for integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 12, 1999·39 cites·14 claims
- 2270US9054037B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·2 cites·20 claims
- 2369US7785985B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·4 cites·19 claims
- 2469US6537914B1Integrated circuit device isolation methods using high selectivity chemical-mechanical polishingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 25, 2003·12 cites·12 claims
- 2565US6645866B2Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing stepSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 11, 2003·11 cites·12 claims
- 2664US5858842AMethods of forming combined trench and locos-based electrical isolation regions in semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jan 12, 1999·31 cites·12 claims
- 2763US5858858AAnnealing methods for forming isolation trenchesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jan 12, 1999·28 cites·23 claims
- 2855US8252681B2Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewallsRYU JEONG-DO·Filed 2009·Granted Aug 28, 2012·0 cites·10 claims
- 2955US6083808AMethod for forming a trench isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 4, 2000·19 cites·13 claims
- 3054US9190495B2Recessed channel array transistors, and semiconductor devices including a recessed channel array transistorRYU JEONG-DO·Filed 2009·Granted Nov 17, 2015·1 cites·11 claims
- 3152US5567645ADevice isolation method in integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Oct 22, 1996·20 cites·14 claims
- 3250US8501611B2Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewallsRYU JEONG-DO·Filed 2012·Granted Aug 6, 2013·0 cites·12 claims
- 3349US2010025749A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3448US6900090B2Semiconductor device having a trench isolation structure and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 31, 2005·2 cites·15 claims
- 3547US2009325356A1Methods of forming a low temperature deposition layer and methods of manufacturing semiconductor device using the sameSHIN DONG-WOON·Filed 2009·Application pending·0 cites
- 3647US2009068823A1Plasma Ion Doping Method and ApparatusSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3746US6258726B1Method of forming isolation film for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 10, 2001·13 cites·12 claims
- 3845US2008176387A1Plasma doping methods using multiple source gasesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3943US2008296670A1Semiconductor Devices Including Transistors Having a Recessed Channel Region and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4042US2008048262A1Fin field effect transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4142US2006249760A1High-voltage transistor of semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4241US5824562AManufacturing method for filling a trench or contact hole in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Oct 20, 1998·7 cites·12 claims
- 4340US2007215959A1Semiconductor structures including accumulations of silicon boronide and related methodsLEE JIN-WOOK·Filed 2007·Application pending·0 cites
- 4438US9312124B2Methods of fabricating gate insulating layers in gate trenches and methods of fabricating semiconductor devices including the samePARK TAI-SU·Filed 2012·Granted Apr 12, 2016·0 cites·20 claims
- 4534US2007054453A1Methods of forming integrated circuit memory devices having a charge storing layer formed by plasma dopingBUH GYOUNG-HO·Filed 2006·Application pending·0 cites
- 4631US5985034AOpening filling apparatus for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 16, 1999·1 cites·5 claims
- 4730US2002003275A1Shallow trench isolation type semiconductor device and method of the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →