Inventor · disambiguated record
Tatsuyuki Shinagawa
Also filed as: SHINAGAWA TATSUYUKI
12 granted patents·3 pending applications·106 citations·filing 2001–2014
90Inventor score
Files withFURUKAWA ELECTRIC CO LTD9SHINAGAWA TATSUYUKI2ADVANCED POWER DEVICE RES ASS1FUJI ELECTRIC CO LTD1NIIYAMA YUKI1
Top patents by PatentIndex Score
15 records- 0186US6700914B2Vertical cavity surface emitting laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2001·Granted Mar 2, 2004·31 cites·30 claims
- 0285US9653589B2Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 2014·Granted May 16, 2017·8 cites·38 claims
- 0385US9276066B2Semiconductor multi-layer substrate and semiconductor elementFUJI ELECTRIC CO LTD·Filed 2013·Granted Mar 1, 2016·9 cites·26 claims
- 0483US8222658B2Semiconductor light emitting element and method of manufacturing thereforSHINAGAWA TATSUYUKI·Filed 2009·Granted Jul 17, 2012·9 cites·17 claims
- 0581US6914925B2Vertical cavity surface emitting semiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Jul 5, 2005·16 cites·6 claims
- 0679US8093626B2Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistorNIIYAMA YUKI·Filed 2007·Granted Jan 10, 2012·10 cites·6 claims
- 0778US6839369B2Surface emitting semiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Jan 4, 2005·13 cites·9 claims
- 0862US8884393B2Nitride compound semiconductor device and manufacturing method thereofADVANCED POWER DEVICE RES ASS·Filed 2013·Granted Nov 11, 2014·2 cites·10 claims
- 0958US8222639B2Nitride based semiconductor device and method of manufacturing the sameSHINAGAWA TATSUYUKI·Filed 2009·Granted Jul 17, 2012·1 cites·1 claims
- 1052US7215693B2Surface emitting semiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2004·Granted May 8, 2007·2 cites·4 claims
- 1151US6636543B2Semiconductor device and surface emitting semiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Oct 21, 2003·2 cites·4 claims
- 1250US6829274B2Surface emitting semiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Dec 7, 2004·3 cites·4 claims
- 1347US2005220160A1Vertical cavity surface emitting semiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2005·Application pending·0 cites
- 1437US2011261849A1Semiconductor light emitting element and method of manufacturing thereofFURUKAWA ELECTRIC CO LTD·Filed 2011·Application pending·0 cites
- 1532US2002167985A1Surface emitting semiconductor laser deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →