Inventor · disambiguated record
Takashi Shinohe
Also filed as: SHINOHE TAKASHI
129 granted patents·44 pending applications·1,241 citations·filing 1984–2025
99Inventor score
Top patents by PatentIndex Score
173 records- 0197US7649213B2Semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jan 19, 2010·63 cites·5 claims
- 0292US10177251B2Semiconductor device, inverter circuit, drive device, vehicle, and elevatorTOSHIBA KK·Filed 2018·Granted Jan 8, 2019·8 cites·20 claims
- 0392US9324826B2Semiconductor device and manufacturing method of the sameSHIMIZU TATSUO·Filed 2011·Granted Apr 26, 2016·12 cites·17 claims
- 0492US8367507B1Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2012·Granted Feb 5, 2013·14 cites·5 claims
- 0592US7439563B2High-breakdown-voltage semiconductor deviceTOSHIBA KK·Filed 2006·Granted Oct 21, 2008·17 cites·6 claims
- 0692US6969887B2Semiconductor deviceTOSHIBA KK·Filed 2005·Granted Nov 29, 2005·21 cites·20 claims
- 0792US6855970B2High-breakdown-voltage semiconductor deviceTOSHIBA KK·Filed 2003·Granted Feb 15, 2005·50 cites·7 claims
- 0891US6054748AHigh voltage semiconductor power deviceTOSHIBA KK·Filed 1998·Granted Apr 25, 2000·104 cites·5 claims
- 0990US7368783B2Semiconductor deviceTOSHIBA KK·Filed 2005·Granted May 6, 2008·17 cites·20 claims
- 1090US6831345B2High withstand voltage semiconductor deviceTOSHIBA KK·Filed 2002·Granted Dec 14, 2004·55 cites·15 claims
- 1190US5910738ADriving circuit for driving a semiconductor device at high speed and method of operating the sameTOSHIBA KK·Filed 1996·Granted Jun 8, 1999·70 cites·15 claims
- 1289US9941361B2Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 10, 2018·5 cites·8 claims
- 1389US7977210B2Semiconductor substrate and semiconductor deviceTOSHIBA KK·Filed 2008·Granted Jul 12, 2011·16 cites·12 claims
- 1489US4760431AGate turn-off thyristor with independent turn-on/off controlling transistorsTOSHIBA KK·Filed 1986·Granted Jul 26, 1988·53 cites·4 claims
- 1587US10943981B2Semiconductor deviceFLOSFIA INC·Filed 2018·Granted Mar 9, 2021·4 cites·20 claims
- 1687US10644115B2Layered structure and semiconductor device including layered structureFLOSFIA INC·Filed 2019·Granted May 5, 2020·6 cites·20 claims
- 1787US10580648B2Semiconductor device and method of manufacturing semiconductor deviceFLOSFIA INC·Filed 2018·Granted Mar 3, 2020·5 cites·18 claims
- 1887US5969400AHigh withstand voltage semiconductor deviceTOSHIBA KK·Filed 1996·Granted Oct 19, 1999·76 cites·5 claims
- 1986US10319819B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2016·Granted Jun 11, 2019·4 cites·24 claims
- 2085US9837488B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Dec 5, 2017·5 cites·16 claims
- 2185US7777292B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Aug 17, 2010·12 cites·18 claims
- 2285US5464994AInsulated-gate thyristorTOSHIBA KK·Filed 1994·Granted Nov 7, 1995·45 cites·11 claims
- 2385US5381026AInsulated-gate thyristorTOSHIBA KK·Filed 1991·Granted Jan 10, 1995·46 cites·8 claims
- 2482US9786740B2Semiconductor device and method for producing the sameTOSHIBA KK·Filed 2015·Granted Oct 10, 2017·3 cites·19 claims
- 2582US8987812B2Semiconductor device and semiconductor device manufacturing methodKONO HIROSHI·Filed 2010·Granted Mar 24, 2015·5 cites·10 claims
- 2682US7238576B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jul 3, 2007·30 cites·23 claims
- 2782US7078781B2High-breakdown-voltage semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jul 18, 2006·22 cites·6 claims
- 2881US11488821B2Film forming method and crystalline multilayer structureFLOSFIA INC·Filed 2019·Granted Nov 1, 2022·2 cites·25 claims
- 2981US5977564ASemiconductor deviceTOSHIBA KK·Filed 1997·Granted Nov 2, 1999·47 cites·3 claims
- 3081US4914496AGate turn-off thyristor with independent turn-on/off controlling transistorsTOSHIBA KK·Filed 1988·Granted Apr 3, 1990·34 cites·14 claims
- 3180US8354715B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2010·Granted Jan 15, 2013·4 cites·5 claims
- 3280US7508045B2SiC Schottky barrier semiconductor deviceTOSHIBA KK·Filed 2007·Granted Mar 24, 2009·8 cites·19 claims
- 3380US6246077B1Semiconductor deviceTOSHIBA KK·Filed 1999·Granted Jun 12, 2001·44 cites·6 claims
- 3479US8012837B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2010·Granted Sep 6, 2011·4 cites·8 claims
- 3579US7026668B2High-breakdown-voltage semiconductor deviceTOSHIBA KK·Filed 2004·Granted Apr 11, 2006·18 cites·6 claims
- 3678US11152472B2Crystalline oxide semiconductorFLOSFIA INC·Filed 2019·Granted Oct 19, 2021·2 cites·16 claims
- 3778US9825121B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Nov 21, 2017·3 cites·4 claims
- 3878US9214459B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Dec 15, 2015·4 cites·10 claims
- 3978US5962893ASchottky tunneling deviceTOSHIBA KK·Filed 1996·Granted Oct 5, 1999·54 cites·9 claims
- 4077US9184229B2Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Nov 10, 2015·3 cites·15 claims
- 4177US8933464B2SiC epitaxial wafer and semiconductor deviceTOSHIBA KK·Filed 2014·Granted Jan 13, 2015·3 cites·20 claims
- 4277US2025072057A1Semiconductor device and semiconductor system including semiconductor deviceFLOSFIA INC·Filed 2024·Application pending·0 cites
- 4376US8624264B2Semiconductor device with low resistance SiC-metal contactSHIMIZU TATSUO·Filed 2011·Granted Jan 7, 2014·4 cites·18 claims
- 4476US5793065AInsulated-gate thyristorTOSHIBA KK·Filed 1995·Granted Aug 11, 1998·29 cites·10 claims
- 4575US9978842B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2016·Granted May 22, 2018·2 cites·10 claims
- 4675US9490327B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2015·Granted Nov 8, 2016·2 cites·12 claims
- 4775US4717940AMIS controlled gate turn-off thyristorTOSHIBA KK·Filed 1987·Granted Jan 5, 1988·32 cites·11 claims
- 4874US7569900B2Silicon carbide high breakdown voltage semiconductor deviceTOSHIBA KK·Filed 2005·Granted Aug 4, 2009·7 cites·18 claims
- 4974US6236069B1Insulated-gate thyristorTOSHIBA KK·Filed 1998·Granted May 22, 2001·26 cites·6 claims
- 5074US4963972AGate turn-off thyristor with switching control field effect transistorTOSHIBA KK·Filed 1989·Granted Oct 16, 1990·29 cites·17 claims
Showing the top 50 of 173 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →