Inventor · disambiguated record
Tadahiko Sugibayashi
Also filed as: SUGIBAYASHI TADAHIKO
101 granted patents·1 pending application·2,620 citations·filing 1989–2016
99Inventor score
Top patents by PatentIndex Score
102 records- 0199US5986942ASemiconductor memory deviceNEC CORP·Filed 1999·Granted Nov 16, 1999·422 cites·20 claims
- 0298US6515511B2Semiconductor integrated circuit and semiconductor integrated circuit deviceNEC CORP·Filed 2001·Granted Feb 4, 2003·450 cites·24 claims
- 0393US7453719B2Magnetic random access memory with improved data reading methodNEC CORP·Filed 2004·Granted Nov 18, 2008·75 cites·36 claims
- 0492US7929342B2Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memoryNEC CORP·Filed 2006·Granted Apr 19, 2011·29 cites·43 claims
- 0592US6885579B2Magnetic random access memory including a cell array having a magneto-resistance elementNEC CORP·Filed 2003·Granted Apr 26, 2005·73 cites·40 claims
- 0692US5631872ALow power consumption semiconductor dynamic random access memory device by reusing residual electric charge on bit line pairsNEC CORP·Filed 1996·Granted May 20, 1997·117 cites·4 claims
- 0791US8902644B2Semiconductor storage device and its manufacturing methodSAKIMURA NOBORU·Filed 2011·Granted Dec 2, 2014·9 cites·10 claims
- 0891US5406526ADynamic random access memory device having sense amplifier arrays selectively activated when associated memory cell sub-arrays are accessedNEC CORP·Filed 1993·Granted Apr 11, 1995·94 cites·7 claims
- 0991US5373477AIntegrated circuit device having step-down circuit for producing internal power voltage free from overshoot upon voltage drop of external power voltageNEC CORP·Filed 1993·Granted Dec 13, 1994·89 cites·5 claims
- 1089US9478309B2Magnetic-domain-wall-displacement memory cell and initializing method thereforNEC CORP·Filed 2013·Granted Oct 25, 2016·12 cites·17 claims
- 1189US6795340B2Non-volatile magnetic memoryNEC CORP·Filed 2003·Granted Sep 21, 2004·52 cites·42 claims
- 1289US6246622B1Semiconductor memory deviceNEC CORP·Filed 2000·Granted Jun 12, 2001·50 cites·17 claims
- 1388US8281221B2Operation method of MRAM including correcting data for single-bit error and multi-bit errorSAKIMURA NOBORU·Filed 2006·Granted Oct 2, 2012·20 cites·20 claims
- 1488US7184301B2Magnetic memory cell and magnetic random access memory using the sameNEC CORP·Filed 2003·Granted Feb 27, 2007·48 cites·121 claims
- 1587US8503222B2Non-volatile logic circuitSUZUKI TETSUHIRO·Filed 2010·Granted Aug 6, 2013·11 cites·28 claims
- 1687US8243502B2Nonvolatile latch circuit and logic circuit using the sameSAKIMURA NOBORU·Filed 2008·Granted Aug 14, 2012·15 cites·16 claims
- 1787US7688617B2MRAM and operation method of the sameNEC CORP·Filed 2006·Granted Mar 30, 2010·19 cites·11 claims
- 1887US7440314B2Toggle-type magnetoresistive random access memoryNEC CORP·Filed 2005·Granted Oct 21, 2008·19 cites·18 claims
- 1987US5463591ADual port memory having a plurality of memory cell arrays for a high-speed operationNEC CORP·Filed 1994·Granted Oct 31, 1995·66 cites·7 claims
- 2087US5319601APower supply start up circuit for dynamic random access memoryNEC CORP·Filed 1992·Granted Jun 7, 1994·56 cites·11 claims
- 2186US8510633B2Semiconductor storage device and method of operating the sameSAKIMURA NOBORU·Filed 2008·Granted Aug 13, 2013·18 cites·18 claims
- 2285US5352935ASemiconductor integrated circuit device with internal voltage controlling circuitNEC CORP·Filed 1992·Granted Oct 4, 1994·51 cites·3 claims
- 2384US9379312B2Magnetoresistive effect element and magnetic random access memory using the sameSUGIBAYASHI TADAHIKO·Filed 2010·Granted Jun 28, 2016·7 cites·9 claims
- 2484US5329168ASemiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sourcesNEC CORP·Filed 1992·Granted Jul 12, 1994·54 cites·12 claims
- 2582US7817462B2Magnetic random access memoryNEC CORP·Filed 2006·Granted Oct 19, 2010·14 cites·25 claims
- 2682US6335895B1Semiconductor storage device and system using the sameNEC CORP·Filed 2000·Granted Jan 1, 2002·31 cites·14 claims
- 2781US6678187B2Semiconductor memory apparatus using tunnel magnetic resistance elementsNEC CORP·Filed 2002·Granted Jan 13, 2004·30 cites·26 claims
- 2880US5184035ABootstrap circuit incorporated in semiconductor memory device for driving word linesNEC CORP·Filed 1991·Granted Feb 2, 1993·34 cites·19 claims
- 2977US8174872B2Nonvolatile latch circuitSAKIMURA NOBORU·Filed 2008·Granted May 8, 2012·10 cites·8 claims
- 3077US8009466B2Semiconductor storage deviceNEC CORP·Filed 2008·Granted Aug 30, 2011·10 cites·10 claims
- 3177US5436910ADynamic random access memory device having a parallel testing mode for producing arbitrary test patternNEC CORP·Filed 1993·Granted Jul 25, 1995·42 cites·4 claims
- 3276US7885131B2Resistance change semiconductor memory device and method of reading data with a first and second switch circuitNEC CORP·Filed 2006·Granted Feb 8, 2011·10 cites·11 claims
- 3376US7292471B2Semiconductor memory device having a voltage-controlled-oscillator-based readout circuitNEC CORP·Filed 2006·Granted Nov 6, 2007·8 cites·23 claims
- 3475US8009467B2Magnetic random access memoryNEC CORP·Filed 2008·Granted Aug 30, 2011·9 cites·28 claims
- 3575US7630234B2Magnetic random access memoryNEC CORP·Filed 2006·Granted Dec 8, 2009·9 cites·20 claims
- 3675US6417704B1Power-on circuit and resetting methodNEC CORP·Filed 1999·Granted Jul 9, 2002·28 cites·8 claims
- 3773US7492629B2Magnetic random access memory and operating method of the sameNEC CORP·Filed 2006·Granted Feb 17, 2009·8 cites·19 claims
- 3873US6205065B1Semiconductor memory device having redundancy memory circuitNEC CORP·Filed 2000·Granted Mar 20, 2001·20 cites·18 claims
- 3972US8693238B2MRAM having variable word line drive potentialSAKIMURA NOBORU·Filed 2007·Granted Apr 8, 2014·8 cites·18 claims
- 4072US8354861B2Magnetoresistive element, logic gate and method of operating logic gateNEC CORP·Filed 2009·Granted Jan 15, 2013·5 cites·16 claims
- 4172US8254157B2Semiconductor integrated circuitSUGIBAYASHI TADAHIKO·Filed 2008·Granted Aug 28, 2012·4 cites·11 claims
- 4272US7885095B2Magnetic random access memory and operation method of the sameNEC CORP·Filed 2007·Granted Feb 8, 2011·8 cites·11 claims
- 4370US9837816B2Semiconductor device, power supply control method of semiconductor device, and sensor nodeNEC CORP·Filed 2013·Granted Dec 5, 2017·3 cites·20 claims
- 4470US5287011APower-on detecting circuit desirable for integrated circuit equipped with internal step-down circuitNEC CORP·Filed 1992·Granted Feb 15, 1994·23 cites·10 claims
- 4569US10312288B2Switching element, semiconductor device, and semiconductor device manufacturing methodNEC CORP·Filed 2016·Granted Jun 4, 2019·1 cites·10 claims
- 4667US7646628B2Toggle magnetic random access memory and write method of toggle magnetic random access memoryNEC CORP·Filed 2006·Granted Jan 12, 2010·6 cites·40 claims
- 4767US6526541B2Library for use in designing a semiconductor deviceNEC CORP·Filed 2001·Granted Feb 25, 2003·11 cites·16 claims
- 4867US5319302ASemiconductor integrated circuit device having voltage regulating unit for variable internal power voltage levelNEC CORP·Filed 1992·Granted Jun 7, 1994·25 cites·6 claims
- 4966US9536584B2Nonvolatile logic gate deviceNEC CORP·Filed 2013·Granted Jan 3, 2017·3 cites·20 claims
- 5066US5848021ASemiconductor memory device having main word decoder skipping defective address during sequential access and method of controlling thereofNEC CORP·Filed 1997·Granted Dec 8, 1998·23 cites·8 claims
Showing the top 50 of 102 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →