Inventor · disambiguated record
Takae Sukegawa
Also filed as: SUKEGAWA TAKAE
12 granted patents·1 pending application·109 citations·filing 1997–2013
89Inventor score
Top patents by PatentIndex Score
13 records- 0180US6008111AMethod of manufacturing semiconductor deviceFUJITSU LTD·Filed 1997·Granted Dec 28, 1999·53 cites·18 claims
- 0269US8637929B2LDMOS transistor having a gate electrode formed over thick and thin portions of a gate insulation filmSATOH SHIGEO·Filed 2011·Granted Jan 28, 2014·3 cites·8 claims
- 0368US7358546B2Heterobipolar transistor and method of fabricating the sameFUJITSU LTD·Filed 2006·Granted Apr 15, 2008·3 cites·1 claims
- 0467US7119382B2Heterobipolar transistor and method of fabricating the sameFUJITSU LTD·Filed 2003·Granted Oct 10, 2006·11 cites·24 claims
- 0566US8609500B2Semiconductor device production methodSATOH SHIGEO·Filed 2012·Granted Dec 17, 2013·2 cites·12 claims
- 0665US6635523B1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 1998·Granted Oct 21, 2003·30 cites·19 claims
- 0762US8729610B2Semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted May 20, 2014·1 cites·8 claims
- 0861US7859088B2Semiconductor device manufacturing method, wafer, and wafer manufacturing methodFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Dec 28, 2010·1 cites·4 claims
- 0956US7989300B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Aug 2, 2011·1 cites·10 claims
- 1051US6806158B2Mixed crystal layer growing method and device, and semiconductor deviceFUJITSU LTD·Filed 2002·Granted Oct 19, 2004·3 cites·13 claims
- 1150US8981472B2MOS transistor and fabrication method of semiconductor integrated circuit deviceSUKEGAWA TAKAE·Filed 2011·Granted Mar 17, 2015·1 cites·10 claims
- 1247US7345003B2Semiconductor device manufacturing method, wafer, and wafer manufacturing methodFUJITSU LTD·Filed 2005·Granted Mar 18, 2008·0 cites·16 claims
- 1344US2008113484A1Method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →