Inventor · disambiguated record
Takaharu Tsuji
Also filed as: TSUJI TAKAHARU
37 granted patents·3 pending applications·936 citations·filing 1996–2011
98Inventor score
Files withMITSUBISHI ELECTRIC CORP18RENESAS TECH CORP15MITSUBISHI ELECTRIC ENG2TANIZAKI HIROAKI2MATSUDA RYOJI1
Top patents by PatentIndex Score
40 records- 0197US7436699B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Oct 14, 2008·78 cites·17 claims
- 0295US6597617B2Semiconductor device with reduced current consumption in standby stateMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jul 22, 2003·83 cites·3 claims
- 0394US6414894B2Semiconductor device with reduced current consumption in standby stateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 2, 2002·66 cites·16 claims
- 0492US7233537B2Thin film magnetic memory device provided with a dummy cell for data read referenceMITSUBISHI ELECTRIC ENG·Filed 2002·Granted Jun 19, 2007·69 cites·25 claims
- 0590US6373315B2Signal potential conversion circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 16, 2002·42 cites·15 claims
- 0688US6384674B2Semiconductor device having hierarchical power supply line structure improved in operating speedMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 7, 2002·73 cites·18 claims
- 0787US6411560B1Semiconductor memory device capable of reducing leakage current flowing into substrateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 25, 2002·48 cites·19 claims
- 0885US5917766ASemiconductor memory device that can carry out read disturb testing and burn-in testing reliablyMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 29, 1999·58 cites·17 claims
- 0981US6898113B2Magnetic memory device with reference cell for data readingRENESAS TECH CORP·Filed 2003·Granted May 24, 2005·30 cites·10 claims
- 1080US6031781ASemiconductor memory device allowing high-speed activation of internal circuitMITISUBISHI DENKI KABUSHIKI KA·Filed 1999·Granted Feb 29, 2000·46 cites·5 claims
- 1179US6597621B2Multi-bank semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 22, 2003·28 cites·7 claims
- 1278US6778434B2Magnetic random access memory device with a reduced number of interconnections for selection of addressRENESAS TECH CORP·Filed 2003·Granted Aug 17, 2004·26 cites·20 claims
- 1375US6618317B1Write system architecture of magnetic memory array divided into a plurality of memory blocksMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 9, 2003·22 cites·11 claims
- 1471US6118710ASemiconductor memory device including disturb refresh test circuitMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 12, 2000·31 cites·6 claims
- 1571US5716889AMethod of arranging alignment marksMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 10, 1998·40 cites·3 claims
- 1670US6791876B2Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the likeRENESAS TECH CORP·Filed 2003·Granted Sep 14, 2004·17 cites·12 claims
- 1769US7272032B2Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrityRENESAS TECH CORP·Filed 2005·Granted Sep 18, 2007·6 cites·16 claims
- 1869US6584022B2Semiconductor memory device with simultaneous data line selection and shift redundancy selectionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 24, 2003·16 cites·18 claims
- 1968US6856537B2Thin film magnetic memory device having dummy cellRENESAS TECH CORP·Filed 2002·Granted Feb 15, 2005·16 cites·13 claims
- 2066US7486547B2Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrityRENESAS TECH CORP·Filed 2007·Granted Feb 3, 2009·5 cites·1 claims
- 2165US6868029B2Semiconductor device with reduced current consumption in standby stateRENESAS TECH CORP·Filed 2003·Granted Mar 15, 2005·10 cites·5 claims
- 2264US8508986B2Semiconductor deviceTANIZAKI HIROAKI·Filed 2011·Granted Aug 13, 2013·3 cites·10 claims
- 2364US5744998AInternal voltage detecting circuit having superior responsibilityMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 28, 1998·19 cites·6 claims
- 2461US8139402B2Magnetic memory deviceTANIZAKI HIROAKI·Filed 2009·Granted Mar 20, 2012·2 cites·29 claims
- 2561US6466509B1Semiconductor memory device having a column select line transmitting a column select signalMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Oct 15, 2002·12 cites·10 claims
- 2660US7447057B2Semiconductor integrated circuit device with a plurality of memory cells storing dataRENESAS TECH CORP·Filed 2006·Granted Nov 4, 2008·4 cites·9 claims
- 2760US6885235B2Semiconductor integrated circuit device with internal power supply potential generation circuitMITSUBISHI ELECTRIC ENG·Filed 2002·Granted Apr 26, 2005·11 cites·18 claims
- 2860US6058053ASemiconductor memory device capable of high speed operation and including redundant cellsMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 2, 2000·19 cites·17 claims
- 2959US5812492AControl signal generation circuit and semiconductor memory device that can correspond to high speed external clock signalMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 22, 1998·19 cites·9 claims
- 3052US8508987B2Semiconductor deviceTSUJI TAKAHARU·Filed 2009·Granted Aug 13, 2013·4 cites·12 claims
- 3148US6961883B2Tester built-in semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2002·Granted Nov 1, 2005·5 cites·14 claims
- 3248US6005294AMethod of arranging alignment marksMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 21, 1999·15 cites·9 claims
- 3346US6747910B2Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocksRENESAS TECH CORP·Filed 2003·Granted Jun 8, 2004·4 cites·20 claims
- 3444US6925029B2Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocksRENESAS TECH CORP·Filed 2004·Granted Aug 2, 2005·3 cites·9 claims
- 3542US6411563B1Semiconductor integrated circuit device provided with a logic circuit and a memory circuit and being capable of efficient interface between the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 25, 2002·3 cites·10 claims
- 3641US6952372B2Semiconductor memory device capable of testing data line redundancy replacement circuitRENESAS TECH CORP·Filed 2004·Granted Oct 4, 2005·2 cites·2 claims
- 3738US6798702B2Semiconductor memory device capable of testing data line redundancy replacement circuitRENESAS TECH CORP·Filed 2002·Granted Sep 28, 2004·1 cites·4 claims
- 3838US2010034015A1Semiconductor deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 3932US2002021593A1Semiconductor memory device with a redundancy structureMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 4032US2012069638A1Semiconductor deviceMATSUDA RYOJI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →