Inventor · disambiguated record
Takahiro Tsuruda
Also filed as: TSURUDA TAKAHIRO
39 granted patents·2 pending applications·1,258 citations·filing 1993–2007
98Inventor score
Top patents by PatentIndex Score
41 records- 0197US6018172ASemiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regionsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 25, 2000·234 cites·31 claims
- 0296US6384445B1Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regionsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 7, 2002·179 cites·22 claims
- 0393US6064621AMulti-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangementMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 16, 2000·103 cites·19 claims
- 0489US5872737ASemiconductor integrated circuit device in which influence of power supply noise on internal circuitry during operation of input/output buffer is preventedMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 16, 1999·81 cites·35 claims
- 0587US5914907ASemiconductor memory device capable of increasing chip yields while maintaining rapid operationMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 22, 1999·69 cites·8 claims
- 0684US6288949B1Semiconductor memory device including an SOI substrateMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 11, 2001·20 cites·10 claims
- 0783US5825696ASemiconductor memory device including an SOI substrateMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 20, 1998·33 cites·9 claims
- 0882US5604707ASemiconductor memory device responsive to hierarchical internal potentialsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 18, 1997·51 cites·11 claims
- 0981US7138684B2Semiconductor memory device including an SOI substrateRENESAS TECH CORP·Filed 2004·Granted Nov 21, 2006·15 cites·2 claims
- 1080US6385159B2Semiconductor memory device including an SOI substrateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·14 cites·4 claims
- 1179US6577534B2Non-volatile semiconductor memory device having a low defective rateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 10, 2003·28 cites·7 claims
- 1279US5635744ASemiconductor memory and semiconductor device having SOI structureMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 3, 1997·52 cites·22 claims
- 1378US5815428ASemiconductor memory device having hierarchical bit line structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 29, 1998·37 cites·21 claims
- 1477US6586803B2Semiconductor device using an SOI substrateMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jul 1, 2003·31 cites·9 claims
- 1577US6072743AHigh speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 6, 2000·35 cites·7 claims
- 1675US6768662B2Semiconductor memory device including an SOI substrateRENESAS TECH CORP·Filed 2003·Granted Jul 27, 2004·10 cites·2 claims
- 1775US5390140ASignal output circuit operating stably and arrangement of power supply interconnection line therefor in semiconductor integrated circuit deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 14, 1995·23 cites·17 claims
- 1873US6215720B1High speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 10, 2001·18 cites·7 claims
- 1971US7242060B2Semiconductor memory device including an SOI substrateRENESAS TECH CORP·Filed 2006·Granted Jul 10, 2007·2 cites·1 claims
- 2071US6577522B2Semiconductor memory device including an SOI substrateMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jun 10, 2003·8 cites·6 claims
- 2169US6787853B2Semiconductor device using an SOI substrateRENESAS TECH CORP·Filed 2003·Granted Sep 7, 2004·11 cites·4 claims
- 2268US6272034B1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·16 cites·4 claims
- 2367US5982005ASemiconductor device using an SOI substrateMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 9, 1999·20 cites·15 claims
- 2466US5652726ASemiconductor memory device having hierarchical bit line structure employing improved bit line precharging systemMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 29, 1997·22 cites·5 claims
- 2563US6091647ASemiconductor memory device including an SOI substrateMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 18, 2000·11 cites·9 claims
- 2663US5796664ASemiconductor memory device having divided word lineMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 18, 1998·22 cites·41 claims
- 2758US6137719ANonvolatile semiconductor memory device storing multi-bit dataMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 24, 2000·18 cites·8 claims
- 2857US6606266B2Nonvolatile semiconductor memory device capable of writing multilevel data at high rateMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 12, 2003·10 cites·8 claims
- 2953US2007257313A1Semiconductor memory device including an SOI substrateRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3052US2007052028A1Semiconductor memory device including an SOI substrateRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3151US6487115B1Non-volatile semiconductor memory device with writing sequence enabling early-stage judgement of writingMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 26, 2002·7 cites·8 claims
- 3251US6069379ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 30, 2000·11 cites·5 claims
- 3350US5734614ADynamic semiconductor memory device using sense amplifier as cache memoryMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 31, 1998·13 cites·15 claims
- 3447US6060738ASemiconductor device having SOI structureMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 9, 2000·11 cites·14 claims
- 3544US6337506B2Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip areaMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 8, 2002·11 cites·14 claims
- 3643US5773865ASemiconductor memory and semiconductor device having SOI structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 30, 1998·9 cites·4 claims
- 3743US5574397ASignal output circuit operating stably and arrangement of power supply interconnection line therefor in semiconductor integrated circuit deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 12, 1996·5 cites·7 claims
- 3842US5512501AMethod of manufacturing a semiconductor device having an SOI structureMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Apr 30, 1996·7 cites·15 claims
- 3935US6214664B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 10, 2001·3 cites·6 claims
- 4034US5848012ASemiconductor memory device having hierarchical bit line structure employing improved bit line precharging systemMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 8, 1998·3 cites·6 claims
- 4132US6215141B1Semiconductor device including a transistor having portions of source and drain regions removed by the same amountMITSUBHISHI DENKI K K·Filed 1996·Granted Apr 10, 2001·5 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Takahiro Tsuruda files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →