Inventor · disambiguated record
Takashi Udagawa
Also filed as: UDAGAWA TAKASHI
81 granted patents·4 pending applications·1,308 citations·filing 1979–2023
99Inventor score
Files withSHOWA DENKO KK65UDAGAWA TAKASHI6KANSAI PAINT CO LTD5KIKUCHI TOMO2TOKYO SHIBAURA ELECTRIC CO2
Top patents by PatentIndex Score
85 records- 0194US6153894AGroup-III nitride semiconductor light-emitting deviceSHOWA DENKO KK·Filed 1999·Granted Nov 28, 2000·215 cites·8 claims
- 0292US6069021AMethod of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layerSHOWA DENKO KK·Filed 1999·Granted May 30, 2000·189 cites·10 claims
- 0390US6787814B2Group-III nitride semiconductor light-emitting device and production method thereofSHOWA DENKO KK·Filed 2001·Granted Sep 7, 2004·77 cites·5 claims
- 0486US8389975B2Group III nitride semiconductor light-emitting deviceKIKUCHI TOMO·Filed 2008·Granted Mar 5, 2013·23 cites·4 claims
- 0585US6645302B2Vapor phase deposition systemSHOWA DENKO KK·Filed 2001·Granted Nov 11, 2003·35 cites·4 claims
- 0684US6512248B1Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lampSHOWA DENKO KK·Filed 2000·Granted Jan 28, 2003·49 cites·4 claims
- 0784US6268618B1Electrode for light-emitting semiconductor devices and method of producing the electrodeSHOWA DENKO KK·Filed 1998·Granted Jul 31, 2001·69 cites·39 claims
- 0883US4756975AProcess for coating automotive outer bodiesKANSAI PAINT CO LTD·Filed 1985·Granted Jul 12, 1988·39 cites·33 claims
- 0981US8043977B2Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrateSHOWA DENKO KK·Filed 2006·Granted Oct 25, 2011·8 cites·8 claims
- 1081US6194744B1Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layerSHOWA DENKO KK·Filed 2000·Granted Feb 27, 2001·30 cites·6 claims
- 1180US6403987B1Electrode for light-emitting semiconductor devicesSHOWA DENKO KK·Filed 2000·Granted Jun 11, 2002·25 cites·3 claims
- 1277US6531716B2Group-III nitride semiconductor light-emitting device and manufacturing method for the sameSHOWA DENKO KK·Filed 2001·Granted Mar 11, 2003·19 cites·8 claims
- 1376US7772599B2Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structureSHOWA DENKO KK·Filed 2005·Granted Aug 10, 2010·5 cites·5 claims
- 1476US7479731B2Multicolor light-emitting lamp and light sourceSHOWA DENKO KK·Filed 2002·Granted Jan 20, 2009·24 cites·15 claims
- 1575US6326223B1Electrode for light-emitting semiconductor devices and method of producing the electrodeSHOWA DENKO KK·Filed 2000·Granted Dec 4, 2001·17 cites·8 claims
- 1675US6110757AMethod of forming epitaxial wafer for light-emitting device including an active layer having a two-phase structureSHOWA DENKO KK·Filed 1998·Granted Aug 29, 2000·40 cites·1 claims
- 1775US4983454AProcess for coating metallic substrateKANSAI PAINT CO LTD·Filed 1989·Granted Jan 8, 1991·23 cites·22 claims
- 1873US6797990B2Boron phosphide-based semiconductor device and production method thereofSHOWA DENKO KK·Filed 2002·Granted Sep 28, 2004·17 cites·21 claims
- 1973US6541799B2Group-III nitride semiconductor light-emitting diodeSHOWA DENKO KK·Filed 2002·Granted Apr 1, 2003·22 cites·10 claims
- 2072US7488987B2Boron phosphide-based semiconductor light-emitting device and production method thereofSHOWA DENKO KK·Filed 2008·Granted Feb 10, 2009·4 cites·18 claims
- 2171US6936863B2Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diodeSHOWA DENKO KK·Filed 2003·Granted Aug 30, 2005·19 cites·23 claims
- 2270US8084781B2Compound semiconductor deviceUDAGAWA TAKASHI·Filed 2006·Granted Dec 27, 2011·4 cites·16 claims
- 2370US6541797B1Group-III nitride semiconductor light-emitting deviceSHOWA DENKO KK·Filed 1998·Granted Apr 1, 2003·47 cites·5 claims
- 2469US7622398B2Semiconductor device, semiconductor layer and production method thereofSHOWA DENKO KK·Filed 2007·Granted Nov 24, 2009·2 cites·7 claims
- 2569US7495261B2Group III nitride semiconductor light-emitting device and method of producing the sameSHOWA DENKO KK·Filed 2005·Granted Feb 24, 2009·4 cites·8 claims
- 2669US5886367AEpitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the waferSHOWA DENKO KK·Filed 1997·Granted Mar 23, 1999·30 cites·8 claims
- 2768US6730987B2Compound semiconductor device, production method thereof, light-emitting device and transistorSHOWA DENKO KK·Filed 2002·Granted May 4, 2004·9 cites·8 claims
- 2868US5011733AProcess for coating metallic substrateKANSAI PAINT CO LTD·Filed 1989·Granted Apr 30, 1991·18 cites·20 claims
- 2967US8216367B2Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrateUDAGAWA TAKASHI·Filed 2006·Granted Jul 10, 2012·2 cites·4 claims
- 3067US7732831B2Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed withinSHOWA DENKO KK·Filed 2005·Granted Jun 8, 2010·3 cites·14 claims
- 3167US6147363ANitride semiconductor light-emitting device and manufacturing method of the sameSHOWA DENKO KK·Filed 1998·Granted Nov 14, 2000·32 cites·12 claims
- 3266US6677615B2Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lampSHOWA DENKO KK·Filed 2002·Granted Jan 13, 2004·14 cites·18 claims
- 3366US6462361B1GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structureSHOWA DENKO KK·Filed 2000·Granted Oct 8, 2002·9 cites·21 claims
- 3465US7781866B2Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the deviceSHOWA DENKO KK·Filed 2005·Granted Aug 24, 2010·2 cites·11 claims
- 3565US7315050B2Semiconductor device, semiconductor layer and production method thereofSHOWA DENKO KK·Filed 2002·Granted Jan 1, 2008·8 cites·6 claims
- 3664US6831304B2P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereofSHOWA DENKO KK·Filed 2003·Granted Dec 14, 2004·12 cites·12 claims
- 3764US4755435AProcess for coating steel panelsKANSAI PAINT CO LTD·Filed 1985·Granted Jul 5, 1988·19 cites·26 claims
- 3863US7989926B2Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereofSHOWA DENKO KK·Filed 2006·Granted Aug 2, 2011·1 cites·11 claims
- 3963US7759225B2Method for fabricating semiconductor layer and light-emitting diodeSHOWA DENKO KK·Filed 2006·Granted Jul 20, 2010·1 cites·9 claims
- 4063US7732832B2Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductorSHOWA DENKO KK·Filed 2005·Granted Jun 8, 2010·2 cites·2 claims
- 4163US7576365B2Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using sameSHOWA DENKO KK·Filed 2005·Granted Aug 18, 2009·2 cites·18 claims
- 4262US7030003B2Compound semiconductor device, production method thereof, light-emitting device and transistorSHOWA DENKO KK·Filed 2004·Granted Apr 18, 2006·6 cites·2 claims
- 4362US6841435B2Method for fabricating a GaInP epitaxial stacking structureSHOWA DENKO KK·Filed 2002·Granted Jan 11, 2005·7 cites·2 claims
- 4462US6835962B2Stacked layer structure, light-emitting device, lamp, and light source unitSHOWA DENKO KK·Filed 2002·Granted Dec 28, 2004·10 cites·13 claims
- 4561US8299451B2Semiconductor light-emitting diodeUDAGAWA TAKASHI·Filed 2006·Granted Oct 30, 2012·1 cites·6 claims
- 4661US7211836B2Group-III nitride semiconductor light-emitting device and production method thereofSHOWA DENKO KK·Filed 2004·Granted May 1, 2007·8 cites·21 claims
- 4761US6984851B2Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrodeSHOWA DENKO KK·Filed 2001·Granted Jan 10, 2006·10 cites·20 claims
- 4861US4755434AProcess for coating metallic substrateKANSAI PAINT CO LTD·Filed 1985·Granted Jul 5, 1988·16 cites·30 claims
- 4960US8134176B2Light-emitting diode and light-emitting diode lampTAKEUCHI RYOUICHI·Filed 2006·Granted Mar 13, 2012·2 cites·10 claims
- 5060US6831293B2P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light sourceSHOWA DENKO KK·Filed 2003·Granted Dec 14, 2004·8 cites·13 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →