Inventor · disambiguated record
Tatsuya Usami
Also filed as: USAMI TATSUYA
119 granted patents·20 pending applications·1,204 citations·filing 1994–2023
99Inventor score
Top patents by PatentIndex Score
139 records- 0195US10158036B2Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2017·Granted Dec 18, 2018·11 cites·14 claims
- 0293US7674721B2Semiconductor device, semiconductor wafer, and methods of producing same device and waferNEC ELECTRONICS CORP·Filed 2007·Granted Mar 9, 2010·17 cites·18 claims
- 0392US7291911B2Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2005·Granted Nov 6, 2007·16 cites·2 claims
- 0491US9508662B2Optical semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·9 cites·9 claims
- 0591US6514852B2Semiconductor device and method of manufacturing the sameNEC CORP·Filed 2001·Granted Feb 4, 2003·48 cites·10 claims
- 0689US7763979B2Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2006·Granted Jul 27, 2010·12 cites·26 claims
- 0789US6787480B2Manufacturing method of semicondcutor deviceNEC CORP·Filed 2002·Granted Sep 7, 2004·49 cites·3 claims
- 0887US7420279B2Carbon containing silicon oxide film having high ashing tolerance and adhesionNEC ELECTRONICS CORP·Filed 2006·Granted Sep 2, 2008·13 cites·7 claims
- 0987US7180191B2Semiconductor device and method of manufacturing a semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Feb 20, 2007·14 cites·20 claims
- 1086US7612453B2Semiconductor device having an interconnect structure and a reinforcing insulating filmNEC ELECTRONICS CORP·Filed 2006·Granted Nov 3, 2009·11 cites·21 claims
- 1186US7563705B2Manufacturing method of semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Jul 21, 2009·10 cites·9 claims
- 1285US9559175B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Jan 31, 2017·5 cites·11 claims
- 1384US7737555B2Semiconductor method having silicon-diffused metal wiring layerNEC ELECTRONICS CORP·Filed 2006·Granted Jun 15, 2010·6 cites·10 claims
- 1483US9236291B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Jan 12, 2016·3 cites·7 claims
- 1583US8274155B2Semiconductor device and method of manufacturing semiconductor deviceUSAMI TATSUYA·Filed 2010·Granted Sep 25, 2012·6 cites·18 claims
- 1683US7615498B2Method of manufacturing a semiconductor deviceNEC ELECTRONICS CORP·Filed 2007·Granted Nov 10, 2009·10 cites·6 claims
- 1783US6468898B1Method of manufacturing semiconductor deviceNEC CORP·Filed 2000·Granted Oct 22, 2002·36 cites·21 claims
- 1882US10295743B2Optical semiconductor device, and method for producing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted May 21, 2019·4 cites·13 claims
- 1981US8624399B2Semiconductor device and method of manufacturing semiconductor deviceUSAMI TATSUYA·Filed 2010·Granted Jan 7, 2014·6 cites·13 claims
- 2081US6531755B1Semiconductor device and manufacturing method thereof for realizing high packaging densityNEC CORP·Filed 2000·Granted Mar 11, 2003·22 cites·4 claims
- 2181US6225217B1Method of manufacturing semiconductor device having multilayer wiringNEC CORP·Filed 1999·Granted May 1, 2001·52 cites·10 claims
- 2281US5751050ASemiconductor device having a polysilicon resistor element with increased stability and method of fabricating sameNEC CORP·Filed 1996·Granted May 12, 1998·48 cites·14 claims
- 2380US9281276B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Mar 8, 2016·3 cites·20 claims
- 2479US9829627B2Semiconductor device and method for manufacturing sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 28, 2017·1 cites·4 claims
- 2579US8466055B2Semiconductor device and method of manufacturing semiconductor deviceUSAMI TATSUYA·Filed 2012·Granted Jun 18, 2013·4 cites·15 claims
- 2679US7473630B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2006·Granted Jan 6, 2009·7 cites·7 claims
- 2779US7391115B2Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2004·Granted Jun 24, 2008·23 cites·4 claims
- 2879US7217654B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2004·Granted May 15, 2007·18 cites·5 claims
- 2978US6255732B1Semiconductor device and process for producing the sameNEC CORP·Filed 1999·Granted Jul 3, 2001·46 cites·14 claims
- 3078US6222269B1Semiconductor device and fabrication process thereofNEC CORP·Filed 1997·Granted Apr 24, 2001·42 cites·11 claims
- 3178US6077574APlasma CVD process for forming a fluorine-doped SiO2 dielectric filmNEC CORP·Filed 1997·Granted Jun 20, 2000·45 cites·16 claims
- 3277US7842602B2Semiconductor device having silicon-diffused metal wiring layer and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2007·Granted Nov 30, 2010·3 cites·25 claims
- 3377US6589863B1Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 1999·Granted Jul 8, 2003·45 cites·5 claims
- 3476US7701060B2Wiring structure and method for manufacturing the sameNEC CORP·Filed 2004·Granted Apr 20, 2010·20 cites·18 claims
- 3576US7531891B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2004·Granted May 12, 2009·22 cites·13 claims
- 3676US5863339AChamber etching of plasma processing apparatusNEC CORP·Filed 1996·Granted Jan 26, 1999·44 cites·8 claims
- 3775US8749058B2Semiconductor device and manufacturing method thereofUSAMI TATSUYA·Filed 2011·Granted Jun 10, 2014·4 cites·32 claims
- 3874US7833901B2Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layerNEC ELECTRONICS CORP·Filed 2006·Granted Nov 16, 2010·5 cites·44 claims
- 3974US7745937B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Jun 29, 2010·4 cites·15 claims
- 4074US7649258B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Jan 19, 2010·6 cites·16 claims
- 4173US9123537B2Method of manufacturing semiconductor device including forming trench pattern in a mask filmRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 1, 2015·2 cites·19 claims
- 4273US6930036B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2003·Granted Aug 16, 2005·12 cites·5 claims
- 4373US6005291ASemiconductor device and process for production thereofNEC CORP·Filed 1998·Granted Dec 21, 1999·42 cites·15 claims
- 4472US8592303B2Wiring structure and method for manufacturing the sameTADA MUNEHIRO·Filed 2010·Granted Nov 26, 2013·3 cites·7 claims
- 4572US7132732B2Semiconductor device having two distinct sioch layersNEC ELECTRONICS CORP·Filed 2004·Granted Nov 7, 2006·16 cites·33 claims
- 4672US7057286B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2002·Granted Jun 6, 2006·11 cites·10 claims
- 4772US6099747AChamber etching of plasma processing apparatusNEC CORP·Filed 1998·Granted Aug 8, 2000·35 cites·8 claims
- 4871US10256133B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Apr 9, 2019·1 cites·17 claims
- 4971US10002883B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Jun 19, 2018·1 cites·5 claims
- 5071US8242014B2Method for manufacturing a semiconductor device having an interconnect structure and a reinforcing insulating filmUSAMI TATSUYA·Filed 2011·Granted Aug 14, 2012·2 cites·2 claims
Showing the top 50 of 139 patent records by PatentIndex Score.
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