Inventor · disambiguated record
Tadato Yamagata
Also filed as: YAMAGATA TADATO
45 granted patents·1 pending application·1,488 citations·filing 1986–2015
99Inventor score
Files withMITSUBISHI ELECTRIC CORP38RENESAS TECH CORP4MITSUBISHI DENKI KABUSHIKI DEN1RENESAS ELECTRONICS CORP1SEKINE YASUSHI1
Top patents by PatentIndex Score
46 records- 0199US5726946ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 10, 1998·224 cites·22 claims
- 0295US5319589ADynamic content addressable memory device and a method of operating thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 7, 1994·143 cites·21 claims
- 0394US6650588B2Semiconductor memory module and register buffer device for use in the sameRENESAS TECH CORP·Filed 2002·Granted Nov 18, 2003·84 cites·13 claims
- 0493US6134171ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 17, 2000·68 cites·6 claims
- 0591US6844754B2Data busRENESAS TECH CORP·Filed 2002·Granted Jan 18, 2005·64 cites·7 claims
- 0691US6310815B1Multi-bank semiconductor memory device suitable for integration with logicMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 30, 2001·98 cites·23 claims
- 0790US6643208B2Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Nov 4, 2003·32 cites·1 claims
- 0883US5959927ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 28, 1999·33 cites·18 claims
- 0983US4780850ACMOS dynamic random access memoryMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Oct 25, 1988·45 cites·16 claims
- 1082US4788455ACMOS reference voltage generator employing separate reference circuits for each output transistorMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Nov 29, 1988·33 cites·9 claims
- 1181US6246625B1Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 12, 2001·19 cites·11 claims
- 1280US6525984B2Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Feb 25, 2003·17 cites·7 claims
- 1380US5146300ASemiconductor integrated circuit device having improved stacked capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 8, 1992·47 cites·11 claims
- 1479US5016220ASemiconductor memory device with logic level responsive testing circuit and method thereforMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 14, 1991·34 cites·8 claims
- 1578US5910181ASemiconductor integrated circuit device comprising synchronous DRAM core and logic circuit integrated into a single chip and method of testing the synchronous DRAM coreMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 8, 1999·40 cites·9 claims
- 1677US5388066AContent addressable memory device and a method of disabling a coincidence word thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 7, 1995·36 cites·13 claims
- 1775US6515922B1Memory moduleMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 4, 2003·22 cites·17 claims
- 1875US6341098B2Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 22, 2002·14 cites·11 claims
- 1975US5930194ASemiconductor memory device capable of block writing in large bus widthMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 27, 1999·37 cites·12 claims
- 2072US6163493ASemiconductor integrated circuit device with large internal bus width, including memory and logic circuitMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 19, 2000·32 cites·15 claims
- 2172US5798974ASemiconductor memory device realizing high speed access and low power consumption with redundant circuitMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 25, 1998·32 cites·13 claims
- 2270US5475638AStatic random access memory device having a single bit line configurationMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 12, 1995·23 cites·21 claims
- 2369US5404329ABoosting circuit improved to operate in a wider range of power supply voltage, and a semiconductor memory and a semiconductor integrated circuit device using the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 4, 1995·29 cites·15 claims
- 2469US4974053ASemiconductor device for multiple packaging configurationsMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 27, 1990·34 cites·5 claims
- 2567US5367493ADynamic type semiconductor memory device having reduced peak current during refresh mode and method of operating the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 22, 1994·25 cites·13 claims
- 2667US4984054AElectric fuse for a redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 8, 1991·38 cites·32 claims
- 2764US5158899AMethod of manufacturing input circuit of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 27, 1992·24 cites·10 claims
- 2863US5228000ATest circuit of semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 13, 1993·22 cites·6 claims
- 2958US9252793B2Semiconductor deviceTSUTSUMI TOSHIAKI·Filed 2010·Granted Feb 2, 2016·1 cites·16 claims
- 3057US5677889AStatic type semiconductor device operable at a low voltage with small power consumptionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 14, 1997·17 cites·10 claims
- 3156US4904885ASubstrate bias circuit having substrate bias voltage clamp and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 27, 1990·13 cites·8 claims
- 3255USRE39579ESemiconductor integrated circuit device comprising RAM with command decode system and logic circuit integrated into a single chip and testing method of the RAM with command decode systemRENESAS TECH CORP·Filed 2001·Granted Apr 17, 2007·4 cites·16 claims
- 3355US4734889ASemiconductor memoryMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Mar 29, 1988·13 cites·6 claims
- 3454US5726943AFast memory device allowing suppression of peak value of operational currentMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 10, 1998·15 cites·16 claims
- 3554US5126968AContent addressable semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jun 30, 1992·16 cites·20 claims
- 3651US6069379ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 30, 2000·11 cites·5 claims
- 3750US6859377B2Dynamic associative memory deviceRENESAS TECH CORP·Filed 2003·Granted Feb 22, 2005·6 cites·5 claims
- 3848US9503018B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·0 cites·17 claims
- 3944US5208474AInput circuit of a semiconductor deviceMITSUBISHI DENKI KABUSHIKI DEN·Filed 1991·Granted May 4, 1993·10 cites·9 claims
- 4042US5572469AStatic random access memory device having a single bit line configurationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 5, 1996·6 cites·4 claims
- 4140US4870620ADynamic random access memory device with internal refreshMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 26, 1989·6 cites·26 claims
- 4238US5418923ACircuit for prioritizing outputs of an associative memory with parallel inhibition paths and a compact architectureMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 23, 1995·6 cites·6 claims
- 4337US5650978ASemiconductor memory device having data transition detecting functionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 22, 1997·5 cites·8 claims
- 4436US5083188AIntegrated circuit having superconductive wiringsMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 21, 1992·7 cites·8 claims
- 4536US2012075029A1Semiconductor deviceSEKINE YASUSHI·Filed 2011·Application pending·0 cites
- 4635US6214664B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 10, 2001·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →