Inventor · disambiguated record
Takahisa Yamaha
Also filed as: YAMAHA TAKAHISA
34 granted patents·3 pending applications·645 citations·filing 1990–2011
98Inventor score
Top patents by PatentIndex Score
37 records- 0194US6297563B1Bonding pad structure of semiconductor deviceYAMAHA CORP·Filed 1999·Granted Oct 2, 2001·133 cites·12 claims
- 0288US7211902B2Method of forming a bonding pad structureYAMAHA CORP·Filed 2006·Granted May 1, 2007·13 cites·14 claims
- 0384US5763936ASemiconductor chip capable of supressing cracks in insulating layerYAMAHA CORP·Filed 1996·Granted Jun 9, 1998·68 cites·20 claims
- 0483US5733797AMethod of making a semiconductor device with moisture impervious filmYAMAHA CORP·Filed 1993·Granted Mar 31, 1998·74 cites·12 claims
- 0577US7067928B2Method of forming a bonding pad structureYAMAHA CORPOATION·Filed 2005·Granted Jun 27, 2006·6 cites·12 claims
- 0676US8237221B2Semiconductor device and method of manufacturing semiconductor deviceYAGI RYOTARO·Filed 2011·Granted Aug 7, 2012·5 cites·3 claims
- 0769US5593925ASemiconductor device capable of preventing humidity invasionYAMAHA CORP·Filed 1994·Granted Jan 14, 1997·36 cites·19 claims
- 0869US5036382ASemiconductor device having a multi-level wiring structureYAMAHA CORP·Filed 1990·Granted Jul 30, 1991·41 cites·19 claims
- 0968US8022472B2Semiconductor device and method of manufacturing semiconductor deviceROHM CO LTD·Filed 2008·Granted Sep 20, 2011·3 cites·7 claims
- 1066US8164160B2Semiconductor deviceNAKAO YUICHI·Filed 2008·Granted Apr 24, 2012·3 cites·12 claims
- 1166US6921714B2Method for manufacturing a semiconductor deviceYAMAHA CORP·Filed 2001·Granted Jul 26, 2005·10 cites·39 claims
- 1264US6555465B2Multi-layer wiring structure of integrated circuit and manufacture of multi-layer wiringYAMAHA CORP·Filed 2002·Granted Apr 29, 2003·9 cites·5 claims
- 1363US6888183B1Manufacture method for semiconductor device with small variation in MOS threshold voltageYAMAHA CORP·Filed 2000·Granted May 3, 2005·7 cites·10 claims
- 1462US5750403AMethod of forming multi-layer wiring utilizing hydrogen silsesquioxane resinYAMAHA CORP·Filed 1996·Granted May 12, 1998·26 cites·22 claims
- 1560US5885857ASemiconductor chip capable of suppressing cracks in the insulating layerYAMAHA CORP·Filed 1998·Granted Mar 23, 1999·22 cites·20 claims
- 1656US5786638ASemiconductor device with moisture impervious filmYAMAHA CORP·Filed 1997·Granted Jul 28, 1998·18 cites·18 claims
- 1751US2008122094A1Method of manufacturing semiconductor device and semiconductor deviceROHM CO LTD·Filed 2007·Application pending·0 cites
- 1850US5821162AMethod of forming multi-layer wiring utilizing SOGYAMAHA CORP·Filed 1996·Granted Oct 13, 1998·16 cites·18 claims
- 1948US6146998AMethod of manufacturing wiring structure having buried plugs in semiconductor device, and semiconductor deviceYAMAHA CORP·Filed 1998·Granted Nov 14, 2000·13 cites·9 claims
- 2048US5793110AMOS transistor with good hot carrier resistance and low interface state densityYAMAHA CORP·Filed 1996·Granted Aug 11, 1998·15 cites·22 claims
- 2147US6150720ASemiconductor device having manufacturing wiring structure with buried plugsYAMAHA CORP·Filed 1998·Granted Nov 21, 2000·12 cites·4 claims
- 2247US6080652AMethod of fabricating a semiconductor device having a multi-layered wiringYAMAHA CORP·Filed 1998·Granted Jun 27, 2000·12 cites·4 claims
- 2347US5998814ASemiconductor device and fabrication method thereofYAMAHA CORP·Filed 1998·Granted Dec 7, 1999·12 cites·4 claims
- 2447US5641993ASemiconductor IC with multilayered Al wiringYAMAHA CORP·Filed 1995·Granted Jun 24, 1997·14 cites·20 claims
- 2547US5629557ASemiconductor device capable of preventing humidity invasionYAMAHA CORP·Filed 1996·Granted May 13, 1997·11 cites·11 claims
- 2646US2008296772A1Semicondutor deviceROHM CO LTD·Filed 2008·Application pending·0 cites
- 2745US2010190335A1Method of manufacturing semiconductor deviceROHM CO LTD·Filed 2010·Application pending·0 cites
- 2844US8125084B2Semiconductor device and semiconductor device manufacturing methodNAKAGAWA RYOSUKE·Filed 2007·Granted Feb 28, 2012·0 cites·6 claims
- 2944US5705429AMethod of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsiusYAMAHA CORP·Filed 1995·Granted Jan 6, 1998·11 cites·26 claims
- 3044US5428251AMulti-layer wiring structure having continuous grain boundariesYAMAHA CORP·Filed 1994·Granted Jun 27, 1995·14 cites·10 claims
- 3143US5904576AMethod of forming wiring structureYAMAHA CORP·Filed 1997·Granted May 18, 1999·10 cites·28 claims
- 3242US5716869AMethod of forming a wiring layer of a semiconductor device using reflow processYAMAHA CORP·Filed 1996·Granted Feb 10, 1998·10 cites·8 claims
- 3341US6541373B2Manufacture method for semiconductor with small variation in MOS threshold voltageYAMAHA CORP·Filed 2001·Granted Apr 1, 2003·0 cites·14 claims
- 3438US5997754AMethod of fabricating multi-layered wiringYAMAHA CORP·Filed 1997·Granted Dec 7, 1999·7 cites·6 claims
- 3537US6060390AMethod of forming wiring layerYAMAHA CORP·Filed 1997·Granted May 9, 2000·6 cites·26 claims
- 3637US5786625AMoisture resistant semiconductor deviceYAMAHA CORP·Filed 1995·Granted Jul 28, 1998·6 cites·18 claims
- 3732US6251805B1Method of fabricating semiconductor deviceYAMAHA CORP·Filed 1997·Granted Jun 26, 2001·2 cites·34 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →