Inventor · disambiguated record
Tetsuo Asaba
Also filed as: ASABA TETSUO
25 granted patents·2 pending applications·546 citations·filing 1992–2009
97Inventor score
Top patents by PatentIndex Score
27 records- 0197US7256381B2Driving an image sensor with reduced area and high image qualitySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 14, 2007·55 cites·20 claims
- 0294US7414233B2Pixel circuit with surface doped region between multiple transfer transistors and image sensor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 19, 2008·25 cites·20 claims
- 0394US5383970AChemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practicing said methodCANON KK·Filed 1992·Granted Jan 24, 1995·102 cites·2 claims
- 0490US7750281B2CMOS image sensor with current mirrorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 6, 2010·13 cites·20 claims
- 0588US5850242ARecording head and recording apparatus and method of manufacturing sameCANON KK·Filed 1996·Granted Dec 15, 1998·66 cites·33 claims
- 0688US5534069AMethod of treating active materialCANON KK·Filed 1993·Granted Jul 9, 1996·47 cites·10 claims
- 0786US7521661B2Driving an image sensor with reduced area and high image qualitySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·8 cites·22 claims
- 0886US7508429B2Solid-state image-sensing device for averaging sub-sampled analog signals and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 24, 2009·10 cites·28 claims
- 0982US7521659B2Driving an image sensor with reduced area and high image qualitySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·7 cites·23 claims
- 1082US5569614AMethod of forming metal pattern including a schottky diodeCANON KK·Filed 1995·Granted Oct 29, 1996·40 cites·7 claims
- 1178US7888715B2Active pixel sensor with coupled gate transfer transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 15, 2011·5 cites·16 claims
- 1273US5776255AChemical vapor deposition apparatusCANON KK·Filed 1996·Granted Jul 7, 1998·43 cites·7 claims
- 1371US7679112B2Color image sensors having pixels with cyan-type and yellow-type color characteristics thereinSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·5 cites·7 claims
- 1469US7652707B2Pixel circuit with reduced wiringSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 26, 2010·2 cites·22 claims
- 1563US5527730AMethod of forming a capacitor having contact hole treated with hydrogen atoms and energy beamCONON KABUSHIKI KAISHA·Filed 1995·Granted Jun 18, 1996·19 cites·9 claims
- 1658US6156657AMethod of treating active materialCANON KK·Filed 1996·Granted Dec 5, 2000·11 cites·10 claims
- 1758US5614439AMethod of making a planar wiring in an insulated groove using alkylaluminum hydrideCANON KK·Filed 1995·Granted Mar 25, 1997·23 cites·13 claims
- 1857US5547708AChemical vapor deposition method for forming a deposited film with the use of liquid raw materialCANON KK·Filed 1994·Granted Aug 20, 1996·15 cites·12 claims
- 1953US5963812AManufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portionCANON KK·Filed 1997·Granted Oct 5, 1999·10 cites·5 claims
- 2048US6128052ASemiconductor device applicable for liquid crystal display device, and process for its fabricationCANON KK·Filed 1997·Granted Oct 3, 2000·15 cites·28 claims
- 2147US5364802AMethod of making a semiconductor device with buried electrodeCANON KK·Filed 1993·Granted Nov 15, 1994·14 cites·3 claims
- 2244US2006108618A1CMOS image sensor having buried channel MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2341US2008224191A1Image pickup device with prevention of leakage currentAHN JUNG-CHAK·Filed 2008·Application pending·0 cites
- 2437US5975685AInk jet recording head having an oriented p-n junction diode, and recording apparatus using the headCANON KK·Filed 1997·Granted Nov 2, 1999·4 cites·32 claims
- 2537US5534453AMethod of manufacturing titanium silicide containing semiconductorsCANON KK·Filed 1993·Granted Jul 9, 1996·5 cites·5 claims
- 2633US5580808AMethod of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beamCANON KK·Filed 1994·Granted Dec 3, 1996·2 cites·11 claims
- 2729US5306934ASemiconductor device with buried electrodeCANON KK·Filed 1992·Granted Apr 26, 1994·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →