Inventor · disambiguated record
Te-Yin Chen
Also filed as: CHEN TE-YIN
16 granted patents·9 pending applications·28 citations·filing 2007–2025
88Inventor score
Top patents by PatentIndex Score
25 records- 0195US11121137B1Semiconductor device with self-aligned landing pad and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Sep 14, 2021·5 cites·11 claims
- 0293US11296211B2Method for preparing semiconductor device with annular semiconductor finNANYA TECHNOLOGY CORP·Filed 2020·Granted Apr 5, 2022·3 cites·4 claims
- 0387US7633109B2DRAM structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Dec 15, 2009·17 cites·6 claims
- 0480US10629455B1Semiconductor package having a blocking damNANYA TECHNOLOGY CORP·Filed 2018·Granted Apr 21, 2020·3 cites·20 claims
- 0577US2025234539A1Semiconductor device with sidewall oxidized dielectricNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0675US2025234541A1Semiconductor device with sidewall oxidized dielectricNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 0774US2024429171A1Semiconductor device with protection liners and air gaps and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0874US2025234537A1Semiconductor device with sidewall oxidized dielectricNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0974US2025234538A1Semiconductor device with sidewall oxidized dielectricNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1073US2025234540A1Semiconductor device with sidewall oxidized dielectricNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 1171US2025107224A1Semiconductor device with annular semiconductor fin and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 1269US12119302B2Semiconductor device with protection liners and air gaps and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2022·Granted Oct 15, 2024·0 cites·20 claims
- 1368US11700720B2Memory device with air gaps for reducing capacitive couplingNANYA TECHNOLOGY CORP·Filed 2022·Granted Jul 11, 2023·0 cites·10 claims
- 1466US11916019B2Method for fabricating semiconductor device with programmable unitNANYA TECHNOLOGY CORP·Filed 2022·Granted Feb 27, 2024·0 cites·11 claims
- 1566US11621265B2Method for fabricating semiconductor device with self-aligned landing padNANYA TECHNOLOGY CORP·Filed 2021·Granted Apr 4, 2023·0 cites·9 claims
- 1664US11777012B2Method for preparing semiconductor device with annular semiconductor finNANYA TECHNOLOGY CORP·Filed 2021·Granted Oct 3, 2023·0 cites·14 claims
- 1763US11955564B2Method for fabricating semiconductor device with sidewall oxidized dielectricNANYA TECHNOLOGY CORP·Filed 2022·Granted Apr 9, 2024·0 cites·9 claims
- 1863US11488907B2Semiconductor device with programmable unit and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Nov 1, 2022·0 cites·14 claims
- 1961US11594605B2Method of preparing semiconductor device with crystalline overlayerNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 28, 2023·0 cites·14 claims
- 2058US11469233B2Method for preparing a memory device with air gaps for reducing capacitive couplingNANYA TECHNOLOGY CORP·Filed 2020·Granted Oct 11, 2022·0 cites·8 claims
- 2157US11302827B2Semiconductor device with sidewall oxidized dielectric and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Apr 12, 2022·0 cites·6 claims
- 2256US10991702B2Semiconductor device and method of preparing the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Apr 27, 2021·0 cites·5 claims
- 2344US7696075B2Method of fabricating semiconductor device having a recess channel structure thereinNANYA TECHNOLOGY CORP·Filed 2008·Granted Apr 13, 2010·0 cites·5 claims
- 2442US2008277709A1Dram structureLEE TZUNG-HAN·Filed 2007·Application pending·0 cites
- 2541US2008318377A1Method of forming self-aligned gates and transistorsLEE TZUNG-HAN·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →