Inventor · disambiguated record
Te-En Cheng
Also filed as: CHENG TE-EN
9 granted patents·4 pending applications·8 citations·filing 2018–2025
79Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0189US10304677B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·5 cites·20 claims
- 0279US12506001B2Low-K feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0377US11205597B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·3 cites·17 claims
- 0477US2025338589A1Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0575US11705327B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 0673US2024395898A1Densified gate spacers and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0771US11295948B2Low-K feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 5, 2022·0 cites·20 claims
- 0867US2025176204A1Nano-FET Transistor with Alternating Nanostructures and Method of Forming ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0965US12237399B2Nano-FET transistor with alternating nanostructures and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·0 cites·20 claims
- 1064US12107145B2Densified gate spacers and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 1156US10950431B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·19 claims
- 1253US2024258100A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1348US10847634B2Field effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →