Inventor · disambiguated record
Te-Hsin Chiu
Also filed as: CHIU TE-HSIN
61 granted patents·28 pending applications·69 citations·filing 2008–2025
98Inventor score
Top patents by PatentIndex Score
89 records- 0199US11545491B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·5 cites·20 claims
- 0299US11374005B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·5 cites·20 claims
- 0397US11894375B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
- 0497US10468410B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·13 cites·20 claims
- 0596US11675952B2Integrated circuit, system and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
- 0695US12009364B2Semiconductor device and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·2 cites·10 claims
- 0795US11948974B2Semiconductor device including vertical transistor with back side power structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·2 cites·20 claims
- 0895US11810959B2Transistor layout to reduce kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·2 cites·20 claims
- 0994US11935830B2Integrated circuit with frontside and backside conductive layers and exposed backside substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·2 cites·20 claims
- 1092US10741555B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·4 cites·20 claims
- 1191US12255148B2Power distribution structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 18, 2025·2 cites·20 claims
- 1291US11063044B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·2 cites·20 claims
- 1391US10998315B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 4, 2021·2 cites·20 claims
- 1491US10971590B2Transistor layout to reduce kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 1591US10937879B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 2, 2021·4 cites·20 claims
- 1690US10510855B2Transistor layout to reduce kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·4 cites·20 claims
- 1790US2025344497A1Semiconductor device having nanosheetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1888US2025366197A1Hybrid cell-based layout methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1988US2025357185A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2087US10784270B2Method to improve fill-in window for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·3 cites·20 claims
- 2187US2025359341A1Backside conducting lines in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2287US2025311414A1Multiple back side/buried power rail (bpr) cell including field-effect transistor with air void between two adjacent bpr cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2386US12396255B2Multiple back side/buried power rail (BPR) cell including field-effect transistors with air void between two adjacent BPR cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 2486US12278238B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 2585US11646314B2Semiconductor device and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 2685US10861951B2Transistor layout to reduce kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 2784US2025324689A1Semiconductor device including vertical transistor with back side power structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2884US2025329641A1Deep lines and shallow lines in signal conducting pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2983US11737254B2Memory device and layout, manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 22, 2023·1 cites·20 claims
- 3083US2024373626A1Array boundary structure to reduce dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3183US2025329639A1Integrated circuit with frontside and backside conductive layers and exposed backside substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3282US12426323B2Semiconductor device including vertical transistor with back side power structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 3382US12127399B2Array boundary structure to reduce dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 3482US2024258311A1Semiconductor device having nanosheetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3582US2025291994A1Integrated circuit, system and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3682US2024347579A1Semiconductor device having capacitor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3781US12456679B2Backside conductive segments cover a first active region and define an opening above a second active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 3881US11302631B2Integrated circuit cells and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 3981US2025212510A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4080US12388016B2Deep lines and shallow lines in signal conducting pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 4180US12087809B2Semiconductor device having capacitor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4280US12021083B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 4380US2024387544A1Hybrid cell-based device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4480US2025359326A1Integrated circuit, system and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4580US2025022801A1Integrated circuit, system and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4680US2023411389A1Semiconductor device having nanosheetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4779US12321679B2Integrated circuit, system and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 4879US12101922B2Memory device and layout, manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 4979US2024373616A1Transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5078US12463089B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →