Inventor · disambiguated record
Tetsuo Fukushi
Also filed as: FUKUSHI TETSUO
13 granted patents·3 pending applications·45 citations·filing 2007–2021
89Inventor score
Files withRENESAS ELECTRONICS CORP10NEC ELECTRONICS CORP2TAKAHASHI HIROYUKI2HOSHINO YASUHARU1MATSUSHIGE MUNEAKI1
Top patents by PatentIndex Score
16 records- 0188US8279691B2Semiconductor memory integrated device with a precharge circuit having thin-film transistors gated by a voltage higher than a power supply voltageTAKAHASHI HIROYUKI·Filed 2010·Granted Oct 2, 2012·10 cites·11 claims
- 0287US7633310B2Semiconductor integrated circuit capable of autonomously adjusting output impedanceNEC ELECTRONICS CORP·Filed 2007·Granted Dec 15, 2009·18 cites·19 claims
- 0378US9251886B2Semiconductor storage deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Feb 2, 2016·4 cites·5 claims
- 0477US10891986B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted Jan 12, 2021·4 cites·16 claims
- 0573US9251868B2Multilayered semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Feb 2, 2016·2 cites·10 claims
- 0666US8482999B2Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltageTAKAHASHI HIROYUKI·Filed 2012·Granted Jul 9, 2013·2 cites·7 claims
- 0765US8681577B2Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltageRENESAS ELECTRONICS CORP·Filed 2013·Granted Mar 25, 2014·2 cites·19 claims
- 0856US9123391B2Semiconductor storage deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 1, 2015·1 cites·13 claims
- 0955US8335116B2Semiconductor storage deviceMATSUSHIGE MUNEAKI·Filed 2011·Granted Dec 18, 2012·2 cites·8 claims
- 1050US11710511B2Semiconductor device having a high-speed memory with stable operationRENESAS ELECTRONICS CORP·Filed 2021·Granted Jul 25, 2023·0 cites·9 claims
- 1147US8811103B2Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltageRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 19, 2014·0 cites·15 claims
- 1245US9384788B2Multilayered semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Jul 5, 2016·0 cites·5 claims
- 1341US2016104516A1Semiconductor storage deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1440US9847108B2Semiconductor storage deviceRENESAS ELECTRONICS CORP·Filed 2012·Granted Dec 19, 2017·0 cites·8 claims
- 1531US2011025279A1Power supply circuit and semiconductor deviceNEC ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 1631US2012250445A1Semiconductor apparatusHOSHINO YASUHARU·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →