Inventor · disambiguated record
Tetsuya Homma
Also filed as: HOMMA TETSUYA
20 granted patents·1,909 citations·filing 1992–2008
97Inventor score
Top patents by PatentIndex Score
20 records- 0198US5334552AMethod for fabricating a semiconductor device having a multi-layered interconnection structureNEC CORP·Filed 1992·Granted Aug 2, 1994·302 cites·9 claims
- 0297US5399529AProcess for producing semiconductor devicesNEC CORP·Filed 1993·Granted Mar 21, 1995·269 cites·3 claims
- 0396US5420075AForming multi-layered interconnections with fluorine compound treatment permitting selective deposition of insulatorNEC CORP·Filed 1993·Granted May 30, 1995·293 cites·14 claims
- 0496US5288518AChemical vapor deposition method for forming fluorine containing silicon oxide filmNEC CORPROATION·Filed 1992·Granted Feb 22, 1994·310 cites·8 claims
- 0596US5215787AMethod of forming silicon oxide film containing fluorineNEC CORP·Filed 1992·Granted Jun 1, 1993·288 cites·7 claims
- 0687US5506177AFabrication process for multilevel interconnections in a semiconductor deviceNEC CORP·Filed 1995·Granted Apr 9, 1996·93 cites·10 claims
- 0775US5840631AMethod of manufacturing semiconductor deviceNEC CORP·Filed 1995·Granted Nov 24, 1998·48 cites·15 claims
- 0872US5405805AMethod for forming interconnect structure, insulating films and surface protective films of semiconductor deviceNEC CORP·Filed 1992·Granted Apr 11, 1995·43 cites·13 claims
- 0970US8317896B2Method of recycling useful metalHOMMA TETSUYA·Filed 2008·Granted Nov 27, 2012·6 cites·21 claims
- 1068US5607880AMethod of fabricating multilevel interconnections in a semiconductor integrated circuitNEC CORP·Filed 1993·Granted Mar 4, 1997·40 cites·37 claims
- 1167US5468682AMethod of manufacturing semiconductor device using the abrasiveNEC CORP·Filed 1994·Granted Nov 21, 1995·39 cites·6 claims
- 1265US5444023AMethod of fabricating a semiconductor device having a multilayer wiring structure and using a fluorine compound-containing gasNEC CORP·Filed 1994·Granted Aug 22, 1995·33 cites·14 claims
- 1360US5521424ASemiconductor device having a silicon oxide film containing fluorine atomsNEC CORP·Filed 1994·Granted May 28, 1996·29 cites·14 claims
- 1456US5407529AMethod for manufacturing semiconductor deviceNEC CORP·Filed 1993·Granted Apr 18, 1995·24 cites·11 claims
- 1554US5744378AMethod for fabricating a semiconductor device having multilevel interconnectionsNEC CORP·Filed 1996·Granted Apr 28, 1998·19 cites·12 claims
- 1653US5776829AMethod for forming multilevel interconnections in a semiconductor deviceNEC CORP·Filed 1995·Granted Jul 7, 1998·20 cites·4 claims
- 1751US5491108AMethod of producing semiconductor integrated circuit device having interplayer insulating film covering substrateNEC CORP·Filed 1993·Granted Feb 13, 1996·20 cites·6 claims
- 1850US5939771ASemiconductor device having an organic resin layer and silicon oxide layer containing fluorine for preventing crosstalk between metal lines and a method of manufacturing the sameNEC CORP·Filed 1996·Granted Aug 17, 1999·16 cites·24 claims
- 1942US6054383AFabrication method of semiconductor deviceNEC CORP·Filed 1996·Granted Apr 25, 2000·11 cites·11 claims
- 2038US5891234ASpin on glass material and method for forming a semiconductor device by using improved spin on glass materialNEC CORP·Filed 1996·Granted Apr 6, 1999·6 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →