Inventor · disambiguated record
Te-Chih Hsiung
Also filed as: Hsiung Te-Chih
26 granted patents·24 pending applications·25 citations·filing 2016–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD50
Top patents by PatentIndex Score
50 records- 0197US11581218B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·5 cites·20 claims
- 0296US12057345B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·2 cites·20 claims
- 0396US11996321B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·4 cites·20 claims
- 0496US11664272B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·3 cites·20 claims
- 0593US11961893B2Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 0693US9837539B1FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·6 cites·19 claims
- 0788US2025364327A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0887US2025366018A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0987US2025359293A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1087US2025364323A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1185US2025351501A1Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1284US11705491B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·1 cites·20 claims
- 1384US10153373B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·2 cites·20 claims
- 1484US2025338594A1Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1581US12349395B2Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1681US12107003B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 1780US12446296B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1880US2025301694A1Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1979US2024395607A1Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2078US2024266218A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2178US2024371956A1Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2277US2024250143A1Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2375US11424364B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 2475US2024387266A1Recessed contacts at line end and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2575US2024363408A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2674US2024387656A1Semiconductor device interconnects and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2774US2023335435A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2873US11211496B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 2973US2023361185A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3073US2024387282A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3172US11967526B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 3272US11967622B2Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 3372US2025096043A1Dielectric cap structure in semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3471US12119386B2Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 3571US11728212B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3670US11942371B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 3770US2024079409A1Semiconductor device structure with conductive via structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3869US12080597B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 3969US11749732B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 4069US2023326978A1Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4169US2023387227A1Semiconductor device interconnects and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4268US12107007B2Recessed contacts at line end and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 4365US12087832B2Semiconductor device interconnects and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 4464US12183633B2Dielectric cap structure in semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 4564US10727346B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 4663US11810919B2Semiconductor device structure with conductive via structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 4762US12324221B2Semiconductor device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 4862US2025316533A1Conductive path with reduced resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4950US2024120203A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5050US2024170339A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →