Inventor · disambiguated record
Teruhisa Ikuta
Also filed as: IKUTA TERUHISA
17 granted patents·107 citations·filing 2000–2019
91Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD7PANASONIC CORP4IKUTA TERUHISA3PANASONIC IP MAN CO LTD3
Top patents by PatentIndex Score
17 records- 0186US7719086B2Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereofPANASONIC CORP·Filed 2007·Granted May 18, 2010·10 cites·2 claims
- 0286US6989566B2High-voltage semiconductor device including a floating blockMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 24, 2006·43 cites·17 claims
- 0380US7944022B2Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereofPANASONIC CORP·Filed 2010·Granted May 17, 2011·4 cites·4 claims
- 0478US6750506B2High-voltage semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 15, 2004·27 cites·8 claims
- 0577US7238987B2Lateral semiconductor device and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jul 3, 2007·8 cites·19 claims
- 0676US7408234B2Semiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Aug 5, 2008·7 cites·12 claims
- 0773US7323747B2Lateral semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Jan 29, 2008·6 cites·3 claims
- 0860US7973361B2High breakdown voltage semiconductor device and fabrication method of the samePANASONIC CORP·Filed 2006·Granted Jul 5, 2011·1 cites·5 claims
- 0955US7157772B2Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jan 2, 2007·1 cites·4 claims
- 1048US8304858B2Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereofIKUTA TERUHISA·Filed 2011·Granted Nov 6, 2012·0 cites·5 claims
- 1147US8093131B2Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereofIKUTA TERUHISA·Filed 2010·Granted Jan 10, 2012·0 cites·7 claims
- 1242US10847610B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2019·Granted Nov 24, 2020·0 cites·11 claims
- 1342US10756172B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·13 claims
- 1441US7485972B2Semiconductor devicePANASONIC CORP·Filed 2006·Granted Feb 3, 2009·0 cites·8 claims
- 1540US7342283B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Mar 11, 2008·0 cites·5 claims
- 1634US9324861B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2015·Granted Apr 26, 2016·0 cites·18 claims
- 1732US8823106B2ESD protective element and plasma display including the ESD protective elementIKUTA TERUHISA·Filed 2010·Granted Sep 2, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →