Inventor · disambiguated record
Tetsuro Ishiguro
Also filed as: ISHIGURO TETSURO
15 granted patents·14 pending applications·43 citations·filing 2011–2025
89Inventor score
Top patents by PatentIndex Score
29 records- 0189US9029868B2Semiconductor apparatus having nitride semiconductor buffer layer doped with at least one of Fe, Si, and CFUJITSU LTD·Filed 2013·Granted May 12, 2015·9 cites·19 claims
- 0287US10431656B2Semiconductor crystal substrate with Fe dopingFUJITSU LTD·Filed 2017·Granted Oct 1, 2019·5 cites·19 claims
- 0387US8878248B2Semiconductor device and fabrication methodISHIGURO TETSURO·Filed 2012·Granted Nov 4, 2014·13 cites·5 claims
- 0484US10992269B2Compound semiconductor device with high power and reduced off-leakage and method for manufacturing the sameFUJITSU LTD·Filed 2018·Granted Apr 27, 2021·3 cites·15 claims
- 0582US9269799B2Semiconductor apparatusFUJITSU LTD·Filed 2013·Granted Feb 23, 2016·5 cites·20 claims
- 0676US9184241B2Semiconductor apparatusFUJITSU LTD·Filed 2013·Granted Nov 10, 2015·4 cites·18 claims
- 0770US9502525B2Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2012·Granted Nov 22, 2016·2 cites·8 claims
- 0869US8592823B2Compound semiconductor device and method for manufacturing the sameKOTANI JUNJI·Filed 2012·Granted Nov 26, 2013·2 cites·10 claims
- 0964US2024369775A1Quantum device, quantum computing device, and quantum computing methodFUJITSU LTD·Filed 2024·Application pending·0 cites
- 1061US2024402434A1Electronic component, optical directional coupler, and method for controlling optical directional couplerFUJITSU LTD·Filed 2024·Application pending·0 cites
- 1160US2025185129A1Quantum device and method for manufacturing quantum deviceFUJITSU LTD·Filed 2025·Application pending·0 cites
- 1260US2024302590A1Quantum device and quantum operation deviceFUJITSU LTD·Filed 2024·Application pending·0 cites
- 1359US2024094459A1Optical waveguide, quantum computing device, and method for manufacturing optical waveguideFUJITSU LTD·Filed 2023·Application pending·0 cites
- 1459US2025085488A1Optical circuit, quantum operation device, and method for manufacturing optical circuitFUJITSU LTD·Filed 2024·Application pending·0 cites
- 1557US2023222375A1Quantum circuit, quantum computer, and method of manufacturing quantum circuitFUJITSU LTD·Filed 2023·Application pending·0 cites
- 1653US2015034967A1Semiconductor deviceFUJITSU LTD·Filed 2014·Application pending·0 cites
- 1749US9312341B2Compound semiconductor device, power source device and high frequency amplifier and method for manufacturing the sameFUJITSU LTD·Filed 2014·Granted Apr 12, 2016·0 cites·11 claims
- 1845US10600901B2Compound semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2016·Granted Mar 24, 2020·0 cites·6 claims
- 1945US10270404B2Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2016·Granted Apr 23, 2019·0 cites·10 claims
- 2045US9899492B2Compound semiconductor device and method for manufacturing the sameFUJITSU LTD·Filed 2015·Granted Feb 20, 2018·0 cites·6 claims
- 2145US2013075786A1Semiconductor deviceISHIGURO TETSURO·Filed 2012·Application pending·0 cites
- 2244US9997594B2Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and method of manufacturing the sameFUJITSU LTD·Filed 2016·Granted Jun 12, 2018·0 cites·9 claims
- 2344US2015076509A1Semiconductor device with buffer layer made of nitride semiconductorFUJITSU LTD·Filed 2014·Application pending·0 cites
- 2443US8476642B2Compound semiconductor device and manufacturing method thereofISHIGURO TETSURO·Filed 2011·Granted Jul 2, 2013·0 cites·18 claims
- 2543US2014091320A1Semiconductor device and method for manufacturing a semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Application pending·0 cites
- 2642US10847642B2Compound semiconductor device and fabrication methodFUJITSU LTD·Filed 2018·Granted Nov 24, 2020·0 cites·21 claims
- 2742US2013248872A1Semiconductor device, nitride semiconductor crystal, method for manufacturing semiconductor device, and method for manufacturing nitride semiconductor crystalFUJITSU LTD·Filed 2013·Application pending·0 cites
- 2842US2014091364A1Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2013·Application pending·0 cites
- 2937US2017229566A1Semiconductor device, power-supply device, and amplifierFUJITSU LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →