Inventor · disambiguated record
Tetsu Kachi
Also filed as: KACHI TETSU
20 granted patents·7 pending applications·321 citations·filing 1997–2018
95Inventor score
Files withSUGIMOTO MASAHIRO6TOYODA GOSEI KK6TOYOTA MOTOR CO LTD5TOYOTA CHUO KENKYUSHO KK4DENSO CORP2
Top patents by PatentIndex Score
27 records- 0197US7777252B2III-V hemt devicesTOYOTA MOTOR CO LTD·Filed 2005·Granted Aug 17, 2010·78 cites·4 claims
- 0296US9818856B2Semiconductor device with high electron mobility transistorDENSO CORP·Filed 2012·Granted Nov 14, 2017·33 cites·18 claims
- 0388US7211839B2Group III nitride semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2004·Granted May 1, 2007·49 cites·22 claims
- 0481US6649943B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2002·Granted Nov 18, 2003·33 cites·20 claims
- 0576US7897987B2Light-emitting device including light-emitting diode and stacked light-emitting phosphor layersTOYODA GOSEI KK·Filed 2009·Granted Mar 1, 2011·7 cites·16 claims
- 0675US8188514B2TransistorSUGIMOTO MASAHIRO·Filed 2009·Granted May 29, 2012·6 cites·4 claims
- 0775US5889806AGroup III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Mar 30, 1999·39 cites·7 claims
- 0874US10121663B2Semiconductor device and method for producing sameDENSO CORP·Filed 2015·Granted Nov 6, 2018·2 cites·3 claims
- 0974US8008749B2Semiconductor device having vertical electrodes structureTOYOTA MOTOR CO LTD·Filed 2005·Granted Aug 30, 2011·6 cites·23 claims
- 1074US6960485B2Light-emitting device using a group III nitride compound semiconductor and a method of manufactureTOYODA GOSEI KK·Filed 2003·Granted Nov 1, 2005·21 cites·2 claims
- 1172US9735260B2III-V HEMT devicesTOYOTA MOTOR CO LTD·Filed 2014·Granted Aug 15, 2017·2 cites·4 claims
- 1272US7084432B2Nitride semiconductor light emitting diodeTOYOTA CHUO KENKYUSHO KK·Filed 2003·Granted Aug 1, 2006·20 cites·5 claims
- 1371US8222675B2Nitride semiconductor device including gate insulating portion containing AINSUGIMOTO MASAHIRO·Filed 2009·Granted Jul 17, 2012·5 cites·12 claims
- 1470US6936484B2Method of manufacturing semiconductor device and semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2003·Granted Aug 30, 2005·14 cites·21 claims
- 1566US8110870B2Semiconductor deviceSUGIMOTO MASAHIRO·Filed 2009·Granted Feb 7, 2012·3 cites·13 claims
- 1661US7800130B2Semiconductor devicesTOYOTA MOTOR CO LTD·Filed 2006·Granted Sep 21, 2010·2 cites·6 claims
- 1750US7342364B2Light sourceTOYODA GOSEI KK·Filed 2005·Granted Mar 11, 2008·0 cites·14 claims
- 1849US8299498B2Semiconductor device having hetero junctionUESUGI TSUTOMU·Filed 2008·Granted Oct 30, 2012·1 cites·18 claims
- 1948US9184271B2III-V HEMT devicesSUGIMOTO MASAHIRO·Filed 2010·Granted Nov 10, 2015·0 cites·6 claims
- 2046US2005133799A1Light-emitting device using a group III nitride compound semiconductor and a method of manufactureTOYODA GOSEI KK·Filed 2005·Application pending·0 cites
- 2139US2008090395A1Method for producing p-type group III nitride semiconductor and method for producing electrode for p-type group III nitride semiconductorSUGIMOTO MASAHIRO·Filed 2007·Application pending·0 cites
- 2239US2009134456A1Semiconductor devices and method of manufacturing themSUGIMOTO MASAHIRO·Filed 2006·Application pending·0 cites
- 2338US2019019873A1Gate switching device and method manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2018·Application pending·0 cites
- 2438US2003099445A1Semiconductor light-emitting element and optical transmission deviceTOYODA CHUO KENKYUSHO KK·Filed 2002·Application pending·0 cites
- 2537US2001028062A1Light-emitting device using a group III nitride compound semiconductor and a method of manufactureFiled 2001·Application pending·0 cites
- 2636US9337267B2Semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2015·Granted May 10, 2016·0 cites·3 claims
- 2733US2004077166A1Semiconductor crystal growing method and semiconductor light-emitting deviceFiled 2002·Application pending·0 cites
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