Inventor · disambiguated record
Teruhiko Kamei
Also filed as: KAMEI TERUHIKO
54 granted patents·1,461 citations·filing 1995–2014
99Inventor score
Files withSANDISK CORP26SEIKO EPSON CORP16SANDISK TECHNOLOGIES INC5MACRONIX INT CO LTD3HALO LSI DESIGN & DEVICE TECH1
Top patents by PatentIndex Score
54 records- 0199US7408804B2Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cellsSANDISK CORP·Filed 2005·Granted Aug 5, 2008·106 cites·26 claims
- 0298US7570520B2Non-volatile storage system with initial programming voltage based on trialSANDISK CORP·Filed 2006·Granted Aug 4, 2009·107 cites·22 claims
- 0398US7403424B2Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cellsSANDISK CORP·Filed 2005·Granted Jul 22, 2008·55 cites·42 claims
- 0498US7400537B2Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cellsSANDISK CORP·Filed 2005·Granted Jul 15, 2008·57 cites·27 claims
- 0597US7606100B2Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cellsSANDISK CORP·Filed 2008·Granted Oct 20, 2009·40 cites·20 claims
- 0697US7352628B2Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memorySANDISK CORP·Filed 2006·Granted Apr 1, 2008·49 cites·13 claims
- 0797US5751637AAutomatic programming algorithm for page mode flash memory with variable programming pulse height and pulse widthMACRONIX INT CO LTD·Filed 1996·Granted May 12, 1998·230 cites·24 claims
- 0896US7457166B2Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltageSANDISK CORP·Filed 2007·Granted Nov 25, 2008·56 cites·25 claims
- 0996US7440319B2Apparatus with segmented bitscan for verification of programmingSANDISK CORP·Filed 2006·Granted Oct 21, 2008·51 cites·31 claims
- 1095US7522457B2Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltageSANDISK CORP·Filed 2007·Granted Apr 21, 2009·38 cites·25 claims
- 1194US7486564B2Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cellsSANDISK CORP·Filed 2005·Granted Feb 3, 2009·21 cites·46 claims
- 1294US7480176B2Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memorySANDISK CORP·Filed 2008·Granted Jan 20, 2009·26 cites·18 claims
- 1393US8743618B1Bit line resistance compensationSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jun 3, 2014·14 cites·28 claims
- 1492US8885416B2Bit line current trip point modulation for reading nonvolatile storage elementsSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 11, 2014·13 cites·29 claims
- 1590US7369437B2System for reading non-volatile storage with efficient setupSANDISK CORP·Filed 2005·Granted May 6, 2008·24 cites·30 claims
- 1689US7489547B2Method of NAND flash memory cell array with adaptive memory state partitioningSANDISK CORP·Filed 2006·Granted Feb 10, 2009·22 cites·22 claims
- 1788US7606084B2Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memorySANDISK CORP·Filed 2006·Granted Oct 20, 2009·21 cites·24 claims
- 1888US7551482B2Method for programming with initial programming voltage based on trialSANDISK CORP·Filed 2006·Granted Jun 23, 2009·19 cites·31 claims
- 1988US6760253B2Non-volatile semiconductor memory device and method of driving the sameSEIKO EPSON CORP·Filed 2002·Granted Jul 6, 2004·47 cites·12 claims
- 2087US9202581B1Sensing method for a flash memory and memory device therewithMACRONIX INT CO LTD·Filed 2014·Granted Dec 1, 2015·9 cites·15 claims
- 2187US8908432B2Bit line resistance compensationSANDISK TECHNOLOGIES INC·Filed 2013·Granted Dec 9, 2014·10 cites·20 claims
- 2286US6587381B2Programming method for non-volatile semiconductor memory deviceHALO LSI DESIGN & DEVICE TECH·Filed 2001·Granted Jul 1, 2003·41 cites·10 claims
- 2386US6587380B2Programming method for non-volatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2001·Granted Jul 1, 2003·43 cites·6 claims
- 2485US7545681B2Segmented bitscan for verification of programmingSANDISK CORP·Filed 2006·Granted Jun 9, 2009·11 cites·13 claims
- 2583US7924625B2Segmented bitscan for verification of programmingSANDISK CORP·Filed 2010·Granted Apr 12, 2011·6 cites·6 claims
- 2681US7545675B2Reading non-volatile storage with efficient setupSANDISK CORP·Filed 2005·Granted Jun 9, 2009·11 cites·25 claims
- 2781US7440322B2Method and system for flash memory devicesSANDISK CORP·Filed 2006·Granted Oct 21, 2008·13 cites·19 claims
- 2879US6707742B2Nonvolatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2003·Granted Mar 16, 2004·26 cites·14 claims
- 2979US6646916B2Non-volatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2002·Granted Nov 11, 2003·27 cites·14 claims
- 3077US7974124B2Pointer based column selection techniques in non-volatile memoriesSANDISK CORP·Filed 2009·Granted Jul 5, 2011·10 cites·18 claims
- 3177US7518911B2Method and system for programming multi-state non-volatile memory devicesSANDISK CORP·Filed 2006·Granted Apr 14, 2009·10 cites·17 claims
- 3277US6868008B2Non-volatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2003·Granted Mar 15, 2005·23 cites·12 claims
- 3377US6738291B2Nonvolatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2003·Granted May 18, 2004·24 cites·10 claims
- 3476US9047954B2Bit line resistance compensationSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 2, 2015·4 cites·18 claims
- 3575US8942047B2Bit line current trip point modulation for reading nonvolatile storage elementsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 27, 2015·4 cites·18 claims
- 3675US6757197B2File storage type non-volatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2003·Granted Jun 29, 2004·22 cites·8 claims
- 3775US6710399B2Nonvolatile semiconductor storage deviceSEIKO EPSON CORP·Filed 2002·Granted Mar 23, 2004·21 cites·18 claims
- 3873US7602652B2Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memorySANDISK CORP·Filed 2008·Granted Oct 13, 2009·6 cites·17 claims
- 3972US5668758ADecoded wordline driver with positive and negative voltage modesMACRONIX INT L CO LTD·Filed 1995·Granted Sep 16, 1997·38 cites·23 claims
- 4071US6707720B2Nonvolatile semiconductor storage deviceSEIKO EPSON CORP·Filed 2002·Granted Mar 16, 2004·19 cites·12 claims
- 4168US7724580B2Segmented bitscan for verification of programmingSANDISK CORP·Filed 2009·Granted May 25, 2010·4 cites·9 claims
- 4267US7489548B2NAND flash memory cell array with adaptive memory state partitioningSANDISK CORP·Filed 2006·Granted Feb 10, 2009·6 cites·22 claims
- 4366US6512698B2Semiconductor deviceSEIKO EPSON CORP·Filed 2001·Granted Jan 28, 2003·14 cites·10 claims
- 4465US9053819B2Programming method to tighten threshold voltage width with avoiding program disturbKAMEI TERUHIKO·Filed 2012·Granted Jun 9, 2015·4 cites·23 claims
- 4561US6914815B2Nonvolatile semiconductor storage deviceSEIKO EPSON CORP·Filed 2002·Granted Jul 5, 2005·11 cites·12 claims
- 4660US8400836B2Segmented bitscan for verification of programmingLI YAN·Filed 2011·Granted Mar 19, 2013·1 cites·20 claims
- 4757US6785182B2Nonvolatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2003·Granted Aug 31, 2004·7 cites·10 claims
- 4855US7768834B2Non-volatile storage system with initial programming voltage based on trialSANDISK CORP·Filed 2009·Granted Aug 3, 2010·2 cites·28 claims
- 4953US6822900B2Non-volatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2002·Granted Nov 23, 2004·7 cites·16 claims
- 5049US7733701B2Reading non-volatile storage with efficient setupSANDISK CORP·Filed 2009·Granted Jun 8, 2010·1 cites·20 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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