Inventor · disambiguated record
Teawon Kim
Also filed as: KIM TEAWON
6 granted patents·10 pending applications·0 citations·filing 2018–2025
65Inventor score
Files withSAMSUNG ELECTRONICS CO LTD16
Top patents by PatentIndex Score
16 records- 0176US2025344454A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0271US12495538B2Semiconductor apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 0370US2025280579A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0465US12342588B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 0565US2025287649A1Integrated circuit semiconductor devices and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0665US2025359019A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0764US12439646B2Oxide semiconductor device comprising oxygen vacanciesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 0863US12453078B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 0959US2025359020A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1055US12213304B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1152US2024074148A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1250US2024215225A1Semiconductor device including spacer structure having air gapSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1349US2024224510A1Field-effect transistor and integrated circuit device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1449US2024079498A1Field effect transistor and integrated circuit device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1548US10861695B2Method of forming a low-k layer and method of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 8, 2020·0 cites·19 claims
- 1647US2024081047A1Semiconductor device including spacer structure having oxidized regionSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →