Inventor · disambiguated record
Teruo Kurahashi
Also filed as: KURAHASHI TERUO
11 granted patents·2 pending applications·136 citations·filing 1992–2022
87Inventor score
Top patents by PatentIndex Score
13 records- 0195US11693290B2Optical waveguide deviceFUJITSU OPTICAL COMPONENTS LTD·Filed 2021·Granted Jul 4, 2023·4 cites·13 claims
- 0293US12153294B2Optical device having dual waveguides with one being an electro-optic crystal waveguideFUJITSU OPTICAL COMPONENTS LTD·Filed 2022·Granted Nov 26, 2024·2 cites·10 claims
- 0393US11624965B2Optical waveguide deviceFUJITSU OPTICAL COMPONENTS LTD·Filed 2021·Granted Apr 11, 2023·3 cites·20 claims
- 0492US11936428B2Optical device and optical communication apparatusFUJITSU OPTICAL COMPONENTS LTD·Filed 2022·Granted Mar 19, 2024·3 cites·14 claims
- 0588US5404412AOptical waveguide deviceFUJITSU LTD·Filed 1992·Granted Apr 4, 1995·80 cites·8 claims
- 0678US5680497AOptical waveguide deviceFUJITSU LTD·Filed 1994·Granted Oct 21, 1997·43 cites·13 claims
- 0756US7947547B2Method for manufacturing a semiconductor deviceFUJITSU LTD·Filed 2008·Granted May 24, 2011·1 cites·6 claims
- 0848US12044910B2Optical device and optical communication apparatusFUJITSU OPTICAL COMPONENTS LTD·Filed 2022·Granted Jul 23, 2024·0 cites·6 claims
- 0943US7968466B2Fabrication process of a semiconductor device to form ultrafine patterns smaller than resolution limit of exposure apparatusFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted Jun 28, 2011·0 cites·10 claims
- 1042US2019181616A1Optical device and method for manufacturing optical deviceFUJITSU LTD·Filed 2019·Application pending·0 cites
- 1141US7612400B2MIM device and electronic apparatusFUJITSU LTD·Filed 2007·Granted Nov 3, 2009·0 cites·20 claims
- 1240US8470653B2Method for manufacturing a P-type MOS transistor, method for manufacturing a CMOS-type semiconductor apparatus having the P-type MOS transistor, and CMOS-type semiconductor apparatus manufactured using the manufacturing methodKURAHASHI TERUO·Filed 2009·Granted Jun 25, 2013·0 cites·15 claims
- 1338US2006208318A1MOS field effect semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →