Inventor · disambiguated record

Te-Yang Lai

Also filed as: LAI TE-YANG

28 granted patents·14 pending applications·10 citations·filing 2019–2025

93Inventor score

Technology areasH10P H10D H10W

Files withTAIWAN SEMICONDUCTOR MFG CO LTD42

Top patents by PatentIndex Score

42 records

0197US11309398B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·4 cites·20 claims
0296US12015066B2Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·3 cites·20 claims
0396US11848370B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
0488US12322595B2Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
0587US2025279276A1Semiconductor devices including crystallized layer having multiple crystalline orientations and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0686US12033853B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
0784US12387935B2Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
0884US12300738B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
0984US2025344483A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1084US2024387704A1Method of gap filling for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1182US12382671B2Semiconductor structure and manufacturing method for the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
1282US2025308906A1Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1381US12136659B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
1481US12020941B2Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
1580US12243932B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
1680US12125706B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
1780US2025359164A1Gate dielectric layers for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1879US11011372B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·1 cites·20 claims
1979US2025366157A1Volumeless Threshold Voltage Tuning for Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2079US2025351560A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2178US12501689B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
2276US11823894B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
2376US11777031B2Semiconductor structure and manufacturing method for the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
2476US2025316485A1Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2575US11777017B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
2674US11824104B2Method of gap filling for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
2774US11817489B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
2873US2023378294A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2972US11710665B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
3071US2024290662A1Volumeless Threshold Voltage Tuning for Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3169US11171219B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
3268US11257950B2Semiconductor structure and manufacturing method for the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
3368US2024313076A1Gate dielectric layers for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3467US11791216B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
3567US11264489B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
3666US12417918B2Semiconductor device having doped gate dielectric layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
3766US10985266B2Method of gap filling for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
3865US11101180B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
3964US2023335551A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4056US11784052B2Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 10, 2023·0 cites·20 claims
4153US2023343818A1Semiconductor Device and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4249US2025022879A1Volume-Less Dipole Incorporation into CFET Having Common GateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →